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2SA1382,T6MIBF(J

2SA1382,T6MIBF(J

For Reference Only

Part Number 2SA1382,T6MIBF(J
PNEDA Part # 2SA1382-T6MIBF-J
Description TRANS PNP 2A 50V TO226-3
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 2,628
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

2SA1382 Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part Number2SA1382,T6MIBF(J
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Single
Datasheet
2SA1382, 2SA1382 Datasheet (Total Pages: 5, Size: 189.25 KB)
PDF2SA1382 Datasheet Cover
2SA1382 Datasheet Page 2 2SA1382 Datasheet Page 3 2SA1382 Datasheet Page 4 2SA1382 Datasheet Page 5

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2SA1382 Specifications

ManufacturerToshiba Semiconductor and Storage
Series-
Transistor TypePNP
Current - Collector (Ic) (Max)2A
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic500mV @ 33mA, 1A
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce150 @ 500mA, 2V
Power - Max900mW
Frequency - Transition110MHz
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-226-3, TO-92-3 Long Body
Supplier Device PackageTO-92MOD

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