Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

2N7002T-13-G

2N7002T-13-G

For Reference Only

Part Number 2N7002T-13-G
PNEDA Part # 2N7002T-13-G
Description MOSFET N-CH 60V SOT523
Manufacturer Diodes Incorporated
Unit Price Request a Quote
In Stock 6,894
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 4 - Apr 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

2N7002T-13-G Resources

Brand Diodes Incorporated
ECAD Module ECAD
Mfr. Part Number2N7002T-13-G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • 2N7002T-13-G Datasheet
  • where to find 2N7002T-13-G
  • Diodes Incorporated

  • Diodes Incorporated 2N7002T-13-G
  • 2N7002T-13-G PDF Datasheet
  • 2N7002T-13-G Stock

  • 2N7002T-13-G Pinout
  • Datasheet 2N7002T-13-G
  • 2N7002T-13-G Supplier

  • Diodes Incorporated Distributor
  • 2N7002T-13-G Price
  • 2N7002T-13-G Distributor

2N7002T-13-G Specifications

ManufacturerDiodes Incorporated
Series*
FET Type-
Technology-
Drain to Source Voltage (Vdss)-
Current - Continuous Drain (Id) @ 25°C-
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting Type-
Supplier Device Package-
Package / Case-

The Products You May Be Interested In

IPB06CN10N G

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

6.2mOhm @ 100A, 10V

Vgs(th) (Max) @ Id

4V @ 180µA

Gate Charge (Qg) (Max) @ Vgs

139nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

9200pF @ 50V

FET Feature

-

Power Dissipation (Max)

214W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK (TO-263AB)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

AON6758_103

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

AlphaMOS

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

27A (Ta), 32A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

3.6mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

40nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1975pF @ 15V

FET Feature

Schottky Diode (Body)

Power Dissipation (Max)

4.1W (Ta), 41W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-DFN (5x6)

Package / Case

8-VDFN Exposed Pad

CSD17581Q3AT

Texas Instruments

Manufacturer

Series

NexFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

60A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

3.8mOhm @ 16A, 10V

Vgs(th) (Max) @ Id

1.7V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

54nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3640pF @ 15V

FET Feature

-

Power Dissipation (Max)

2.8W (Ta), 63W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-VSONP (3x3.15)

Package / Case

8-PowerVDFN

SK8403170L

Panasonic Electronic Components

Manufacturer

Panasonic Electronic Components

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

16A (Ta), 59A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4.1mOhm @ 12A, 10V

Vgs(th) (Max) @ Id

3V @ 2.56mA

Gate Charge (Qg) (Max) @ Vgs

17nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2940pF @ 10V

FET Feature

-

Power Dissipation (Max)

2W (Ta), 24.6W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

HSSO8-F1-B

Package / Case

8-PowerSMD, Flat Leads

APT17F80S

Microsemi

Manufacturer

Microsemi Corporation

Series

POWER MOS 8™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

18A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

580mOhm @ 9A, 10V

Vgs(th) (Max) @ Id

5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

122nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

3757pF @ 25V

FET Feature

-

Power Dissipation (Max)

500W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D3Pak

Package / Case

TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Recently Sold

ADM1184ARMZ-REEL7

ADM1184ARMZ-REEL7

Analog Devices

IC VOLT MONITOR/SEQ 4CH 10MSOP

WSL2512R0500FEA

WSL2512R0500FEA

Vishay Dale

RES 0.05 OHM 1% 1W 2512

PA95

PA95

Apex Microtechnology

IC OPAMP POWER 1 CIRCUIT 8SIP

AT24C256-10TI-2.7

AT24C256-10TI-2.7

Microchip Technology

IC EEPROM 256K I2C 1MHZ 8TSSOP

ATXMEGA16A4U-AUR

ATXMEGA16A4U-AUR

Microchip Technology

IC MCU 8/16BIT 16KB FLASH 44TQFP

DSC1001DI5-024.0000

DSC1001DI5-024.0000

Microchip Technology

MEMS OSC XO 24.0000MHZ CMOS SMD

WSL120600000ZEA9

WSL120600000ZEA9

Vishay Dale

RES 0 OHM JUMPER 1206

NRVBS3200T3G

NRVBS3200T3G

ON Semiconductor

DIODE SCHOTTKY 200V 3A SMB

AD7994BRU-0REEL

AD7994BRU-0REEL

Analog Devices

IC ADC 12BIT SAR 16TSSOP

ESD9X5.0ST5G

ESD9X5.0ST5G

ON Semiconductor

TVS DIODE 5V 12.3V SOD923

SMBJ36A-13-F

SMBJ36A-13-F

Diodes Incorporated

TVS DIODE 36V 58.1V SMB

SP0503BAHT

SP0503BAHT

Littelfuse

TVS DIODE 5.5V 8.5V SOT143-4