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2N7002E-T1-GE3

2N7002E-T1-GE3

For Reference Only

Part Number 2N7002E-T1-GE3
PNEDA Part # 2N7002E-T1-GE3
Description MOSFET N-CH 60V 240MA SOT23
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 148,626
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

2N7002E-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part Number2N7002E-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
2N7002E-T1-GE3, 2N7002E-T1-GE3 Datasheet (Total Pages: 8, Size: 182.2 KB)
PDF2N7002E Datasheet Cover
2N7002E Datasheet Page 2 2N7002E Datasheet Page 3 2N7002E Datasheet Page 4 2N7002E Datasheet Page 5 2N7002E Datasheet Page 6 2N7002E Datasheet Page 7 2N7002E Datasheet Page 8

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2N7002E-T1-GE3 Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C240mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs0.6nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds21pF @ 5V
FET Feature-
Power Dissipation (Max)350mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-236
Package / CaseTO-236-3, SC-59, SOT-23-3

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