2N6667G
For Reference Only
| Part Number | 2N6667G |
| PNEDA Part # | 2N6667G |
| Description | TRANS PNP DARL 60V 10A TO220AB |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 18,720 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 4 - Apr 9 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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2N6667G Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | 2N6667G |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - Single |
| Datasheet |
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2N6667G Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| Transistor Type | PNP - Darlington |
| Current - Collector (Ic) (Max) | 10A |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 100mA, 10A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 5A, 3V |
| Power - Max | 2W |
| Frequency - Transition | - |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220AB |
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Manufacturer ON Semiconductor Series - Transistor Type PNP Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 45V Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA Current - Collector Cutoff (Max) 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V Power - Max 500mW Frequency - Transition 150MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
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