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2N6667G

2N6667G

For Reference Only

Part Number 2N6667G
PNEDA Part # 2N6667G
Description TRANS PNP DARL 60V 10A TO220AB
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 18,720
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 28 - Dec 3 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

2N6667G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part Number2N6667G
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Single
Datasheet
2N6667G, 2N6667G Datasheet (Total Pages: 6, Size: 113.75 KB)
PDF2N6667 Datasheet Cover
2N6667 Datasheet Page 2 2N6667 Datasheet Page 3 2N6667 Datasheet Page 4 2N6667 Datasheet Page 5 2N6667 Datasheet Page 6

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2N6667G Specifications

ManufacturerON Semiconductor
Series-
Transistor TypePNP - Darlington
Current - Collector (Ic) (Max)10A
Voltage - Collector Emitter Breakdown (Max)60V
Vce Saturation (Max) @ Ib, Ic3V @ 100mA, 10A
Current - Collector Cutoff (Max)1mA
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 5A, 3V
Power - Max2W
Frequency - Transition-
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220AB

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