2N6427G
For Reference Only
| Part Number | 2N6427G |
| PNEDA Part # | 2N6427G |
| Description | TRANS NPN DARL 40V 0.5A TO92 |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 2,250 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 5 - Apr 10 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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2N6427G Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | 2N6427G |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - Single |
| Datasheet |
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2N6427G Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| Transistor Type | NPN - Darlington |
| Current - Collector (Ic) (Max) | 500mA |
| Voltage - Collector Emitter Breakdown (Max) | 40V |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 500µA, 500mA |
| Current - Collector Cutoff (Max) | 1μA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20000 @ 100mA, 5V |
| Power - Max | 625mW |
| Frequency - Transition | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Supplier Device Package | TO-92-3 |
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Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type NPN Current - Collector (Ic) (Max) 1A Voltage - Collector Emitter Breakdown (Max) 160V Vce Saturation (Max) @ Ib, Ic 1.5V @ 50mA, 500mA Current - Collector Cutoff (Max) 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 200mA, 5V Power - Max 900mW Frequency - Transition 100MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 Long Body Supplier Device Package TO-92MOD |
Manufacturer STMicroelectronics Series - Transistor Type PNP Current - Collector (Ic) (Max) 4A Voltage - Collector Emitter Breakdown (Max) 80V Vce Saturation (Max) @ Ib, Ic 800mV @ 200mA, 2A Current - Collector Cutoff (Max) 100µA DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 500mA, 1V Power - Max 36W Frequency - Transition - Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-225AA, TO-126-3 Supplier Device Package SOT-32 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 600mA Voltage - Collector Emitter Breakdown (Max) 160V Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA Current - Collector Cutoff (Max) 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V Power - Max 625mW Frequency - Transition 300MHz Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
