2N5822
For Reference Only
Part Number | 2N5822 |
PNEDA Part # | 2N5822 |
Description | THROUGH-HOLE TRANSISTOR-SMALL SI |
Manufacturer | Central Semiconductor Corp |
Unit Price | Request a Quote |
In Stock | 2,556 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Nov 26 - Dec 1 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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2N5822 Resources
Brand | Central Semiconductor Corp |
ECAD Module | |
Mfr. Part Number | 2N5822 |
Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - Single |
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2N5822 Specifications
Manufacturer | Central Semiconductor Corp |
Series | - |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 750mA |
Voltage - Collector Emitter Breakdown (Max) | 70V |
Vce Saturation (Max) @ Ib, Ic | 1.2V @ 50mA, 500mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 2mA, 2V |
Power - Max | 1.5W |
Frequency - Transition | 120MHz |
Operating Temperature | -65°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package | TO-92 |
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ON Semiconductor Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 200mA Voltage - Collector Emitter Breakdown (Max) 15V Vce Saturation (Max) @ Ib, Ic 500mV @ 10mA, 100mA Current - Collector Cutoff (Max) 400nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 10mA, 1V Power - Max 350mW Frequency - Transition - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
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