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2N5115JTXV02

2N5115JTXV02

For Reference Only

Part Number 2N5115JTXV02
PNEDA Part # 2N5115JTXV02
Description JFET P-CH 30V TO-18
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 8,334
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

2N5115JTXV02 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part Number2N5115JTXV02
CategorySemiconductorsTransistorsTransistors - JFETs

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2N5115JTXV02 Specifications

ManufacturerVishay Siliconix
Series-
FET Type-
Voltage - Breakdown (V(BR)GSS)-
Drain to Source Voltage (Vdss)-
Current - Drain (Idss) @ Vds (Vgs=0)-
Current Drain (Id) - Max-
Voltage - Cutoff (VGS off) @ Id-
Input Capacitance (Ciss) (Max) @ Vds-
Resistance - RDS(On)-
Power - Max-
Operating Temperature-
Mounting TypeThrough Hole
Package / CaseTO-206AA, TO-18-3 Metal Can
Supplier Device PackageTO-206AA (TO-18)

The Products You May Be Interested In

Manufacturer

NXP USA Inc.

Series

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FET Type

P-Channel

Voltage - Breakdown (V(BR)GSS)

30V

Drain to Source Voltage (Vdss)

30V

Current - Drain (Idss) @ Vds (Vgs=0)

20mA @ 15V

Current Drain (Id) - Max

-

Voltage - Cutoff (VGS off) @ Id

5V @ 10nA

Input Capacitance (Ciss) (Max) @ Vds

8pF @ 10V (VGS)

Resistance - RDS(On)

85 Ohms

Power - Max

300mW

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

SOT-23 (TO-236AB)

J175_D74Z

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Voltage - Breakdown (V(BR)GSS)

30V

Drain to Source Voltage (Vdss)

-

Current - Drain (Idss) @ Vds (Vgs=0)

7mA @ 15V

Current Drain (Id) - Max

-

Voltage - Cutoff (VGS off) @ Id

3V @ 10nA

Input Capacitance (Ciss) (Max) @ Vds

-

Resistance - RDS(On)

125 Ohms

Power - Max

350mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

Manufacturer

NXP USA Inc.

Series

-

FET Type

N-Channel

Voltage - Breakdown (V(BR)GSS)

25V

Drain to Source Voltage (Vdss)

25V

Current - Drain (Idss) @ Vds (Vgs=0)

12mA @ 10V

Current Drain (Id) - Max

-

Voltage - Cutoff (VGS off) @ Id

1V @ 1µA

Input Capacitance (Ciss) (Max) @ Vds

5pF @ 10V

Resistance - RDS(On)

50 Ohms

Power - Max

250mW

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

SOT-23 (TO-236AB)

FJX597JBTF

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Voltage - Breakdown (V(BR)GSS)

20V

Drain to Source Voltage (Vdss)

-

Current - Drain (Idss) @ Vds (Vgs=0)

150µA @ 5V

Current Drain (Id) - Max

1mA

Voltage - Cutoff (VGS off) @ Id

600mV @ 1µA

Input Capacitance (Ciss) (Max) @ Vds

3.5pF @ 5V

Resistance - RDS(On)

-

Power - Max

100mW

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

SC-70, SOT-323

Supplier Device Package

SC-70 (SOT323)

MMBF4118

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Voltage - Breakdown (V(BR)GSS)

40V

Drain to Source Voltage (Vdss)

-

Current - Drain (Idss) @ Vds (Vgs=0)

80µA @ 10V

Current Drain (Id) - Max

-

Voltage - Cutoff (VGS off) @ Id

1V @ 1nA

Input Capacitance (Ciss) (Max) @ Vds

3pF @ 10V

Resistance - RDS(On)

-

Power - Max

225mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

SOT-23-3

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