2N5014S
For Reference Only
| Part Number | 2N5014S |
| PNEDA Part # | 2N5014S |
| Description | TRANSISTOR NPN TO-39 |
| Manufacturer | Microsemi |
| Unit Price | Request a Quote |
| In Stock | 2,214 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 4 - Apr 9 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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2N5014S Resources
| Brand | Microsemi |
| ECAD Module |
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| Mfr. Part Number | 2N5014S |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - Single |
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
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- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
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2N5014S Specifications
| Manufacturer | Microsemi Corporation |
| Series | Military, MIL-PRF-19500/727 |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 200mA |
| Voltage - Collector Emitter Breakdown (Max) | 900V |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 5mA, 20mA |
| Current - Collector Cutoff (Max) | 10nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 20mA, 10V |
| Power - Max | 1W |
| Frequency - Transition | - |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Supplier Device Package | TO-39 (TO-205AD) |
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Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 1.5A Voltage - Collector Emitter Breakdown (Max) 40V Vce Saturation (Max) @ Ib, Ic 500mV @ 100mA, 1A Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 1A, 1V Power - Max 1W Frequency - Transition - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 Long Body (Formed Leads) Supplier Device Package TO-226 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 5A Voltage - Collector Emitter Breakdown (Max) 450V Vce Saturation (Max) @ Ib, Ic 1.5V @ 500mA, 2.5A Current - Collector Cutoff (Max) 1mA DC Current Gain (hFE) (Min) @ Ic, Vce - Power - Max 100W Frequency - Transition - Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220-3 |
Manufacturer ON Semiconductor Series - Transistor Type PNP Current - Collector (Ic) (Max) 500mA Voltage - Collector Emitter Breakdown (Max) 300V Vce Saturation (Max) @ Ib, Ic 500mV @ 2mA, 20mA Current - Collector Cutoff (Max) 250nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 30mA, 10V Power - Max 350mW Frequency - Transition 50MHz Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23-3 |
Manufacturer Diodes Incorporated Series - Transistor Type NPN Current - Collector (Ic) (Max) 2A Voltage - Collector Emitter Breakdown (Max) 100V Vce Saturation (Max) @ Ib, Ic 500mV @ 200mA, 2A Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA, 2V Power - Max 2W Frequency - Transition 175MHz Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-261-4, TO-261AA Supplier Device Package SOT-223 |
