2N4033
For Reference Only
| Part Number | 2N4033 |
| PNEDA Part # | 2N4033_1A9 |
| Description | DIE TRANS PNP SM SIGN GEN PURP |
| Manufacturer | MICROSS/On Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 2,448 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 2 - Apr 7 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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2N4033 Resources
| Brand | MICROSS/On Semiconductor |
| ECAD Module |
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| Mfr. Part Number | 2N4033 |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - Single |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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2N4033 Specifications
| Manufacturer | MICROSS/On Semiconductor |
| Series | * |
| Transistor Type | - |
| Current - Collector (Ic) (Max) | - |
| Voltage - Collector Emitter Breakdown (Max) | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Power - Max | - |
| Frequency - Transition | - |
| Operating Temperature | - |
| Mounting Type | - |
| Package / Case | - |
| Supplier Device Package | - |
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Manufacturer NXP USA Inc. Series - Transistor Type NPN Current - Collector (Ic) (Max) 1A Voltage - Collector Emitter Breakdown (Max) 100V Vce Saturation (Max) @ Ib, Ic 200mV @ 100mA, 1A Current - Collector Cutoff (Max) 100nA DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 250mA, 10V Power - Max 830mW Frequency - Transition 100MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer Microsemi Corporation Series - Transistor Type PNP Current - Collector (Ic) (Max) 30mA Voltage - Collector Emitter Breakdown (Max) 15V Vce Saturation (Max) @ Ib, Ic 350mV @ 1mA, 10mA Current - Collector Cutoff (Max) 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 10mA, 1V Power - Max 200mW Frequency - Transition - Operating Temperature -65°C ~ 200°C (TJ) Mounting Type Surface Mount Package / Case 3-SMD, No Lead Supplier Device Package UB |
Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type NPN Current - Collector (Ic) (Max) 15A Voltage - Collector Emitter Breakdown (Max) 230V Vce Saturation (Max) @ Ib, Ic 3V @ 800mA, 8A Current - Collector Cutoff (Max) 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 1A, 5V Power - Max 150W Frequency - Transition 30MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-3PL Supplier Device Package TO-3P(L) |
