2N3507AU4
For Reference Only
| Part Number | 2N3507AU4 |
| PNEDA Part # | 2N3507AU4 |
| Description | NPN TRANSISTOR |
| Manufacturer | Microsemi |
| Unit Price | Request a Quote |
| In Stock | 6,264 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 4 - Apr 9 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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2N3507AU4 Resources
| Brand | Microsemi |
| ECAD Module |
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| Mfr. Part Number | 2N3507AU4 |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
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- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
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2N3507AU4 Specifications
| Manufacturer | Microsemi Corporation |
| Series | Military, MIL-PRF-19500/349 |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 3A |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 250mA, 2.5A |
| Current - Collector Cutoff (Max) | 1μA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 1.5A, 2V |
| Power - Max | 1W |
| Frequency - Transition | - |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 3-SMD, No Lead |
| Supplier Device Package | U4 |
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Manufacturer Sanken Series - Transistor Type NPN Current - Collector (Ic) (Max) 18A Voltage - Collector Emitter Breakdown (Max) 400V Vce Saturation (Max) @ Ib, Ic 500mV @ 2A, 10A Current - Collector Cutoff (Max) 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 10A, 4V Power - Max 130W Frequency - Transition 10MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-3P-3, SC-65-3 Supplier Device Package TO-3P |
Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 2A Voltage - Collector Emitter Breakdown (Max) 10V Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 2A Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 140 @ 500mA, 1V Power - Max 750mW Frequency - Transition 150MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
