2N2907AE4
For Reference Only
Part Number | 2N2907AE4 |
PNEDA Part # | 2N2907AE4 |
Description | DIE TRANS PNP MED PWR GEN PURP T |
Manufacturer | Microsemi |
Unit Price | Request a Quote |
In Stock | 5,940 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Nov 24 - Nov 29 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
2N2907AE4 Resources
Brand | Microsemi |
ECAD Module | |
Mfr. Part Number | 2N2907AE4 |
Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- 2N2907AE4 Datasheet
- where to find 2N2907AE4
- Microsemi
- Microsemi 2N2907AE4
- 2N2907AE4 PDF Datasheet
- 2N2907AE4 Stock
- 2N2907AE4 Pinout
- Datasheet 2N2907AE4
- 2N2907AE4 Supplier
- Microsemi Distributor
- 2N2907AE4 Price
- 2N2907AE4 Distributor
2N2907AE4 Specifications
Manufacturer | Microsemi Corporation |
Series | - |
Transistor Type | PNP |
Current - Collector (Ic) (Max) | 600mA |
Voltage - Collector Emitter Breakdown (Max) | 60V |
Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA |
Current - Collector Cutoff (Max) | 10µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
Power - Max | 500mW |
Frequency - Transition | - |
Operating Temperature | -65°C ~ 200°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-206AA, TO-18-3 Metal Can |
Supplier Device Package | TO-18 |
The Products You May Be Interested In
Rohm Semiconductor Manufacturer Rohm Semiconductor Series - Transistor Type PNP Current - Collector (Ic) (Max) 1A Voltage - Collector Emitter Breakdown (Max) 80V Vce Saturation (Max) @ Ib, Ic 400mV @ 50mA, 500mA Current - Collector Cutoff (Max) 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 100mA, 3V Power - Max 10W Frequency - Transition 100MHz Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package CPT3 |
ON Semiconductor Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 500mA Voltage - Collector Emitter Breakdown (Max) 45V Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 100mA, 1V Power - Max 300mW Frequency - Transition 100MHz Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23-3 (TO-236) |
ON Semiconductor Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 800mA Voltage - Collector Emitter Breakdown (Max) 45V Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA Current - Collector Cutoff (Max) 100nA DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 100mA, 1V Power - Max 625mW Frequency - Transition 100MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
STMicroelectronics Manufacturer STMicroelectronics Series - Transistor Type NPN Current - Collector (Ic) (Max) 3A Voltage - Collector Emitter Breakdown (Max) 60V Vce Saturation (Max) @ Ib, Ic 1.2V @ 600mA, 3A Current - Collector Cutoff (Max) 300µA DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 1A, 4V Power - Max 40W Frequency - Transition - Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220AB |
ON Semiconductor Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 150mA Voltage - Collector Emitter Breakdown (Max) 300V Vce Saturation (Max) @ Ib, Ic 500mV @ 2mA, 20mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 30mA, 10V Power - Max 450mW Frequency - Transition - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case SC-70, SOT-323 Supplier Device Package SC-70-3 (SOT323) |