1SS307E,L3F
For Reference Only
| Part Number | 1SS307E,L3F |
| PNEDA Part # | 1SS307E-L3F |
| Description | DIODE GEN PURP 80V 100MA SC79 |
| Manufacturer | Toshiba Semiconductor and Storage |
| Unit Price | Request a Quote |
| In Stock | 77,298 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 23 - Nov 28 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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1SS307E Resources
| Brand | Toshiba Semiconductor and Storage |
| ECAD Module |
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| Mfr. Part Number | 1SS307E,L3F |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
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1SS307E Specifications
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | - |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 80V |
| Current - Average Rectified (Io) | 100mA |
| Voltage - Forward (Vf) (Max) @ If | 1.3V @ 100mA |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 10nA @ 80V |
| Capacitance @ Vr, F | 6pF @ 0V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | SC-79, SOD-523 |
| Supplier Device Package | SC-79 |
| Operating Temperature - Junction | 150°C (Max) |
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Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 200V Current - Average Rectified (Io) 2A Voltage - Forward (Vf) (Max) @ If 1.05V @ 2A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 35ns Current - Reverse Leakage @ Vr 2µA @ 200V Capacitance @ Vr, F - Mounting Type Surface Mount Package / Case DO-214AA, SMB Supplier Device Package DO-214AA (SMB) Operating Temperature - Junction -55°C ~ 175°C |
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