1N916ATR
For Reference Only
| Part Number | 1N916ATR |
| PNEDA Part # | 1N916ATR |
| Description | DIODE GEN PURP 100V 200MA DO35 |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 8,892 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 5 - Apr 10 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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1N916ATR Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | 1N916ATR |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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1N916ATR Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 100V |
| Current - Average Rectified (Io) | 200mA |
| Voltage - Forward (Vf) (Max) @ If | 1V @ 20mA |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Reverse Recovery Time (trr) | 4ns |
| Current - Reverse Leakage @ Vr | 5µA @ 75V |
| Capacitance @ Vr, F | 2pF @ 0V, 1MHz |
| Mounting Type | Through Hole |
| Package / Case | DO-204AH, DO-35, Axial |
| Supplier Device Package | DO-35 |
| Operating Temperature - Junction | -65°C ~ 175°C |
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Manufacturer Semtech Corporation Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 15000V Current - Average Rectified (Io) 2A Voltage - Forward (Vf) (Max) @ If 18.4V @ 3A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) 2.5µs Current - Reverse Leakage @ Vr 1µA @ 15000V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case Axial Supplier Device Package - Operating Temperature - Junction -55°C ~ 150°C |
Manufacturer Microsemi Corporation Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 400V Current - Average Rectified (Io) 3A Voltage - Forward (Vf) (Max) @ If 1.5V @ 9A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 150ns Current - Reverse Leakage @ Vr 1µA @ 400V Capacitance @ Vr, F - Mounting Type Surface Mount Package / Case E-MELF Supplier Device Package D-5B Operating Temperature - Junction -65°C ~ 175°C |
Manufacturer Taiwan Semiconductor Corporation Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 100V Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If 800mV @ 1A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 50µA @ 100V Capacitance @ Vr, F - Mounting Type Surface Mount Package / Case DO-219AB Supplier Device Package Sub SMA Operating Temperature - Junction -55°C ~ 150°C |
Manufacturer Micro Commercial Co Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 1000V Current - Average Rectified (Io) 4A Voltage - Forward (Vf) (Max) @ If 1.85V @ 4A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 75ns Current - Reverse Leakage @ Vr 10µA @ 1000V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case DO-201AD, Axial Supplier Device Package DO-201AD Operating Temperature - Junction -55°C ~ 150°C |
