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1N8031-GA

1N8031-GA

For Reference Only

Part Number 1N8031-GA
PNEDA Part # 1N8031-GA
Description DIODE SCHOTTKY 650V 1A TO276
Manufacturer GeneSiC Semiconductor
Unit Price Request a Quote
In Stock 4,122
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

1N8031-GA Resources

Brand GeneSiC Semiconductor
ECAD Module ECAD
Mfr. Part Number1N8031-GA
CategorySemiconductorsDiodes & RectifiersRectifiers - Single
Datasheet
1N8031-GA, 1N8031-GA Datasheet (Total Pages: 5, Size: 584.2 KB)
PDF1N8031-GA Datasheet Cover
1N8031-GA Datasheet Page 2 1N8031-GA Datasheet Page 3 1N8031-GA Datasheet Page 4 1N8031-GA Datasheet Page 5

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1N8031-GA Specifications

ManufacturerGeneSiC Semiconductor
Series-
Diode TypeSilicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)650V
Current - Average Rectified (Io)1A
Voltage - Forward (Vf) (Max) @ If1.5V @ 1A
SpeedNo Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)0ns
Current - Reverse Leakage @ Vr5µA @ 650V
Capacitance @ Vr, F76pF @ 1V, 1MHz
Mounting TypeThrough Hole
Package / CaseTO-276AA
Supplier Device PackageTO-276
Operating Temperature - Junction-55°C ~ 250°C

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