1N6631US

For Reference Only
Part Number | 1N6631US |
PNEDA Part # | 1N6631US |
Description | DIODE GEN PURP 1.1KV 1.4A A-MELF |
Manufacturer | Microsemi |
Unit Price | Request a Quote |
In Stock | 5,580 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Mar 31 - Apr 5 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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1N6631US Resources
Brand | Microsemi |
ECAD Module |
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Mfr. Part Number | 1N6631US |
Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
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Logistics Mode





- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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1N6631US Specifications
Manufacturer | Microsemi Corporation |
Series | - |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | 1100V |
Current - Average Rectified (Io) | 1.4A |
Voltage - Forward (Vf) (Max) @ If | 1.4V @ 1.4A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | 60ns |
Current - Reverse Leakage @ Vr | 4µA @ 1100V |
Capacitance @ Vr, F | 40pF @ 10V, 1MHz |
Mounting Type | Surface Mount |
Package / Case | SQ-MELF, A |
Supplier Device Package | A-MELF |
Operating Temperature - Junction | -65°C ~ 150°C |
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Manufacturer Microsemi Corporation Series * Diode Type - Voltage - DC Reverse (Vr) (Max) - Current - Average Rectified (Io) - Voltage - Forward (Vf) (Max) @ If - Speed - Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr - Capacitance @ Vr, F - Mounting Type - Package / Case - Supplier Device Package - Operating Temperature - Junction - |
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