1N6625E3
For Reference Only
| Part Number | 1N6625E3 |
| PNEDA Part # | 1N6625E3 |
| Description | DIODE GEN PURP 1.1KV 1A AXIAL |
| Manufacturer | Microsemi |
| Unit Price | Request a Quote |
| In Stock | 5,094 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 27 - Dec 2 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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1N6625E3 Resources
| Brand | Microsemi |
| ECAD Module |
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| Mfr. Part Number | 1N6625E3 |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
Payment Method
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
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- Orders cannot be canceled after shipping the packages.
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1N6625E3 Specifications
| Manufacturer | Microsemi Corporation |
| Series | - |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 1100V |
| Current - Average Rectified (Io) | 1A |
| Voltage - Forward (Vf) (Max) @ If | 1.95V @ 1.5A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 80ns |
| Current - Reverse Leakage @ Vr | 1µA @ 1000V |
| Capacitance @ Vr, F | - |
| Mounting Type | Through Hole |
| Package / Case | A, Axial |
| Supplier Device Package | A, Axial |
| Operating Temperature - Junction | -65°C ~ 150°C |
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Manufacturer Powerex Inc. Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 800V Current - Average Rectified (Io) 100A Voltage - Forward (Vf) (Max) @ If 1.55V @ 470A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) 7µs Current - Reverse Leakage @ Vr 30mA @ 800V Capacitance @ Vr, F - Mounting Type Chassis, Stud Mount Package / Case DO-205AA, DO-8, Stud Supplier Device Package DO-205AA (DO-8) Operating Temperature - Junction -65°C ~ 200°C |
Manufacturer GeneSiC Semiconductor Series - Diode Type Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max) 100V Current - Average Rectified (Io) 200A Voltage - Forward (Vf) (Max) @ If 840mV @ 200A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 5mA @ 20V Capacitance @ Vr, F - Mounting Type Chassis Mount Package / Case D-67 Supplier Device Package D-67 Operating Temperature - Junction - |
Manufacturer Taiwan Semiconductor Corporation Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 30V Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If 520mV @ 1A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 5µA @ 30V Capacitance @ Vr, F 50pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case 2-SMD, Flat Lead Supplier Device Package Micro SMA Operating Temperature - Junction -55°C ~ 150°C |
