1N5811US
For Reference Only
| Part Number | 1N5811US |
| PNEDA Part # | 1N5811US |
| Description | DIODE GEN PURP 150V 3A B-MELF |
| Manufacturer | Microsemi |
| Unit Price | Request a Quote |
| In Stock | 15,936 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 30 - Dec 5 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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1N5811US Resources
| Brand | Microsemi |
| ECAD Module |
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| Mfr. Part Number | 1N5811US |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
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- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
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1N5811US Specifications
| Manufacturer | Microsemi Corporation |
| Series | - |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 150V |
| Current - Average Rectified (Io) | 3A |
| Voltage - Forward (Vf) (Max) @ If | 875mV @ 4A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 30ns |
| Current - Reverse Leakage @ Vr | 5µA @ 50V |
| Capacitance @ Vr, F | 60pF @ 10V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | SQ-MELF, B |
| Supplier Device Package | B, SQ-MELF |
| Operating Temperature - Junction | -65°C ~ 175°C |
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Manufacturer Vishay Semiconductor Diodes Division Series TMBS® Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 200V Current - Average Rectified (Io) 5A Voltage - Forward (Vf) (Max) @ If 880mV @ 5A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 150µA @ 200V Capacitance @ Vr, F - Mounting Type Surface Mount Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package TO-263AB Operating Temperature - Junction -40°C ~ 175°C |
Manufacturer IXYS Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 1200V Current - Average Rectified (Io) 60A Voltage - Forward (Vf) (Max) @ If 1.19V @ 60A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 30µA @ 1200V Capacitance @ Vr, F 33pF @ 400V, 1MHz Mounting Type Through Hole Package / Case TO-247-2 Supplier Device Package TO-247AD Operating Temperature - Junction -55°C ~ 175°C |
Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 40V Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If 500mV @ 1A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 500µA @ 40V Capacitance @ Vr, F 110pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case DO-213AB, MELF Supplier Device Package GL41 (DO-213AB) Operating Temperature - Junction -55°C ~ 125°C |
