1N5811TR
For Reference Only
| Part Number | 1N5811TR |
| PNEDA Part # | 1N5811TR |
| Description | DIODE GEN PURP 150V 6A AXIAL |
| Manufacturer | Microsemi |
| Unit Price | Request a Quote |
| In Stock | 3,924 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 17 - Apr 22 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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1N5811TR Resources
| Brand | Microsemi |
| ECAD Module |
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| Mfr. Part Number | 1N5811TR |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
Payment Method
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
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- If you have special order instructions,please note it on the ordering pages.
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- Orders cannot be canceled after shipping the packages.
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1N5811TR Specifications
| Manufacturer | Microsemi Corporation |
| Series | - |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 150V |
| Current - Average Rectified (Io) | 6A |
| Voltage - Forward (Vf) (Max) @ If | 875mV @ 4A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 30ns |
| Current - Reverse Leakage @ Vr | 5µA @ 150V |
| Capacitance @ Vr, F | - |
| Mounting Type | Through Hole |
| Package / Case | B, Axial |
| Supplier Device Package | - |
| Operating Temperature - Junction | -65°C ~ 175°C |
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Manufacturer Taiwan Semiconductor Corporation Series Automotive, AEC-Q101 Diode Type Standard Voltage - DC Reverse (Vr) (Max) 50V Current - Average Rectified (Io) 8A Voltage - Forward (Vf) (Max) @ If 975mV @ 8A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 35ns Current - Reverse Leakage @ Vr 10µA @ 50V Capacitance @ Vr, F 70pF @ 4V, 1MHz Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220AB Operating Temperature - Junction -55°C ~ 150°C |
Manufacturer Vishay Semiconductor Diodes Division Series Automotive, AEC-Q101, eSMP®, TMBS® Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 100V Current - Average Rectified (Io) 35A Voltage - Forward (Vf) (Max) @ If 900mV @ 35A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 800µA @ 100V Capacitance @ Vr, F 2500pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package SlimDPAK Operating Temperature - Junction -40°C ~ 175°C |
