1N5402GHB0G
For Reference Only
| Part Number | 1N5402GHB0G |
| PNEDA Part # | 1N5402GHB0G |
| Description | DIODE GEN PURP 200V 3A DO201AD |
| Manufacturer | Taiwan Semiconductor Corporation |
| Unit Price | Request a Quote |
| In Stock | 8,172 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 27 - Dec 2 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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1N5402GHB0G Resources
| Brand | Taiwan Semiconductor Corporation |
| ECAD Module |
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| Mfr. Part Number | 1N5402GHB0G |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
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1N5402GHB0G Specifications
| Manufacturer | Taiwan Semiconductor Corporation |
| Series | Automotive, AEC-Q101 |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 200V |
| Current - Average Rectified (Io) | 3A |
| Voltage - Forward (Vf) (Max) @ If | 1V @ 3A |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 5µA @ 200V |
| Capacitance @ Vr, F | 25pF @ 4V, 1MHz |
| Mounting Type | Through Hole |
| Package / Case | DO-201AD, Axial |
| Supplier Device Package | DO-201AD |
| Operating Temperature - Junction | -55°C ~ 150°C |
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Manufacturer Vishay Semiconductor Diodes Division Series Automotive, AEC-Q101, eSMP®, TMBS® Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 45V Current - Average Rectified (Io) 4.3A Voltage - Forward (Vf) (Max) @ If 580mV @ 12A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 1mA @ 45V Capacitance @ Vr, F - Mounting Type Surface Mount Package / Case TO-277, 3-PowerDFN Supplier Device Package TO-277A (SMPC) Operating Temperature - Junction -40°C ~ 150°C |
Manufacturer Vishay Semiconductor Diodes Division Series eSMP® Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 60V Current - Average Rectified (Io) 2A Voltage - Forward (Vf) (Max) @ If 600mV @ 2A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 900µA @ 60V Capacitance @ Vr, F 100pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case DO-219AB Supplier Device Package DO-219AB (SMF) Operating Temperature - Junction -55°C ~ 150°C |
