1N5399-E3/73
For Reference Only
| Part Number | 1N5399-E3/73 |
| PNEDA Part # | 1N5399-E3-73 |
| Description | DIODE GEN PURP 1KV 1.5A DO204 |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Unit Price | Request a Quote |
| In Stock | 5,652 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 25 - Nov 30 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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1N5399-E3/73 Resources
| Brand | Vishay Semiconductor Diodes Division |
| ECAD Module |
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| Mfr. Part Number | 1N5399-E3/73 |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
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1N5399-E3/73 Specifications
| Manufacturer | Vishay Semiconductor Diodes Division |
| Series | - |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 1000V |
| Current - Average Rectified (Io) | 1.5A |
| Voltage - Forward (Vf) (Max) @ If | 1.4V @ 1.5A |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 2µs |
| Current - Reverse Leakage @ Vr | 5µA @ 1000V |
| Capacitance @ Vr, F | 15pF @ 4V, 1MHz |
| Mounting Type | Through Hole |
| Package / Case | DO-204AL, DO-41, Axial |
| Supplier Device Package | DO-204AL (DO-41) |
| Operating Temperature - Junction | -50°C ~ 150°C |
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Manufacturer Toshiba Semiconductor and Storage Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 30V Current - Average Rectified (Io) 100mA Voltage - Forward (Vf) (Max) @ If 620mV @ 100mA Speed Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 700nA @ 30V Capacitance @ Vr, F 8.2pF @ 0V, 1MHz Mounting Type Surface Mount Package / Case 0201 (0603 Metric) Supplier Device Package SL2 Operating Temperature - Junction 125°C (Max) |
Manufacturer Microsemi Corporation Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 90V Current - Average Rectified (Io) 5A Voltage - Forward (Vf) (Max) @ If 800mV @ 5A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 250µA @ 90V Capacitance @ Vr, F - Mounting Type Surface Mount Package / Case DO-214AB, SMC Supplier Device Package DO-214AB Operating Temperature - Junction -55°C ~ 175°C |
Manufacturer Comchip Technology Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 50V Current - Average Rectified (Io) 1A (DC) Voltage - Forward (Vf) (Max) @ If 700mV @ 1A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 500µA @ 50V Capacitance @ Vr, F 120pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case SOD-123T Supplier Device Package SOD-123HT Operating Temperature - Junction -55°C ~ 150°C |
