1N4935GHR1G
For Reference Only
| Part Number | 1N4935GHR1G |
| PNEDA Part # | 1N4935GHR1G |
| Description | DIODE GEN PURP 200V 1A DO204AL |
| Manufacturer | Taiwan Semiconductor Corporation |
| Unit Price | Request a Quote |
| In Stock | 8,514 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 24 - Nov 29 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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1N4935GHR1G Resources
| Brand | Taiwan Semiconductor Corporation |
| ECAD Module |
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| Mfr. Part Number | 1N4935GHR1G |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
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1N4935GHR1G Specifications
| Manufacturer | Taiwan Semiconductor Corporation |
| Series | Automotive, AEC-Q101 |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 200V |
| Current - Average Rectified (Io) | 1A |
| Voltage - Forward (Vf) (Max) @ If | 1.2V @ 1A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 200ns |
| Current - Reverse Leakage @ Vr | 5µA @ 200V |
| Capacitance @ Vr, F | 10pF @ 4V, 1MHz |
| Mounting Type | Through Hole |
| Package / Case | DO-204AL, DO-41, Axial |
| Supplier Device Package | DO-204AL (DO-41) |
| Operating Temperature - Junction | -55°C ~ 150°C |
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Manufacturer Global Power Technologies Group Series Amp+™ Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 650V Current - Average Rectified (Io) 15A (DC) Voltage - Forward (Vf) (Max) @ If 1.65V @ 5A Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 50µA @ 650V Capacitance @ Vr, F 264pF @ 1V, 1MHz Mounting Type Surface Mount Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package TO-252, (D-Pak) Operating Temperature - Junction -55°C ~ 175°C |
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