1N4007
For Reference Only
| Part Number | 1N4007 |
| PNEDA Part # | 1N4007_6B |
| Description | DIODE GEN PURP 1KV 1A DO41 |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 6,786 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Feb 19 - Feb 24 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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1N4007 Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | 1N4007 |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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1N4007 Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 1000V |
| Current - Average Rectified (Io) | 1A |
| Voltage - Forward (Vf) (Max) @ If | 1.1V @ 1A |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 5µA @ 1000V |
| Capacitance @ Vr, F | 15pF @ 4V, 1MHz |
| Mounting Type | Through Hole |
| Package / Case | DO-204AL, DO-41, Axial |
| Supplier Device Package | DO-204AL (DO-41) |
| Operating Temperature - Junction | -55°C ~ 175°C |
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Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Avalanche Voltage - DC Reverse (Vr) (Max) 100V Current - Average Rectified (Io) 1.9A Voltage - Forward (Vf) (Max) @ If 1.1V @ 1A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 50ns Current - Reverse Leakage @ Vr 5µA @ 100V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case SOD-57, Axial Supplier Device Package SOD-57 Operating Temperature - Junction -55°C ~ 175°C |
Manufacturer Global Power Technologies Group Series Amp+™ Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 1200V Current - Average Rectified (Io) 60A (DC) Voltage - Forward (Vf) (Max) @ If 1.7V @ 60A Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) 0ns Current - Reverse Leakage @ Vr 100µA @ 1200V Capacitance @ Vr, F 3581pF @ 1V, 1MHz Mounting Type Through Hole Package / Case TO-247-2 Supplier Device Package TO-247-2 Operating Temperature - Junction -55°C ~ 135°C |
Manufacturer ON Semiconductor Series Automotive, AEC-Q101 Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 30V Current - Average Rectified (Io) 5A Voltage - Forward (Vf) (Max) @ If 540mV @ 5A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 15.72ns Current - Reverse Leakage @ Vr 100µA @ 30V Capacitance @ Vr, F 159pF @ 10V, 1MHz Mounting Type Surface Mount Package / Case DO-214AD, SMAF Supplier Device Package DO-214AD (SMAF) Operating Temperature - Junction -55°C ~ 150°C |
