1N3070TR
For Reference Only
| Part Number | 1N3070TR |
| PNEDA Part # | 1N3070TR |
| Description | DIODE GEN PURP 200V 500MA DO35 |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 230,238 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 26 - Dec 1 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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1N3070TR Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | 1N3070TR |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
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1N3070TR Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 200V |
| Current - Average Rectified (Io) | 500mA |
| Voltage - Forward (Vf) (Max) @ If | 1V @ 100mA |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 50ns |
| Current - Reverse Leakage @ Vr | 100nA @ 175V |
| Capacitance @ Vr, F | 5pF @ 0V, 1MHz |
| Mounting Type | Through Hole |
| Package / Case | DO-204AH, DO-35, Axial |
| Supplier Device Package | DO-35 |
| Operating Temperature - Junction | 175°C (Max) |
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Manufacturer Vishay Semiconductor Diodes Division Series eSMP® Diode Type Avalanche Voltage - DC Reverse (Vr) (Max) 1000V Current - Average Rectified (Io) 2.1A (DC) Voltage - Forward (Vf) (Max) @ If 920mV @ 1.5A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) 1.2µs Current - Reverse Leakage @ Vr 10µA @ 1000V Capacitance @ Vr, F 37pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case TO-277, 3-PowerDFN Supplier Device Package TO-277A (SMPC) Operating Temperature - Junction -55°C ~ 175°C |
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