ON Semiconductor Rectifiers - Single
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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
ManufacturerON Semiconductor
Records 2,271
Page 66/76
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ON Semiconductor |
DIODE GP 50V 6A MICRODE BUTTON |
5,094 |
|
- | Standard | 50V | 6A | 900mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 25µA @ 50V | - | Through Hole | Button, Axial | Microde Button | -65°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE GP 100V 6A MICRODE BUTTON |
2,844 |
|
- | Standard | 100V | 6A | 900mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 25µA @ 100V | - | Through Hole | Button, Axial | Microde Button | -65°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE GP 100V 6A MICRODE BUTTON |
5,202 |
|
- | Standard | 100V | 6A | 900mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 25µA @ 100V | - | Through Hole | Button, Axial | Microde Button | -65°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE GP 200V 6A MICRODE BUTTON |
2,088 |
|
- | Standard | 200V | 6A | 900mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 25µA @ 200V | - | Through Hole | Button, Axial | Microde Button | -65°C ~ 175°C |
|
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|
ON Semiconductor |
DIODE GP 200V 6A MICRODE BUTTON |
5,220 |
|
- | Standard | 200V | 6A | 900mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 25µA @ 200V | - | Through Hole | Button, Axial | Microde Button | -65°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 50V 3A DO201AD |
7,488 |
|
- | Standard | 50V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 10µA @ 50V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 125°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 100V 3A DO201AD |
7,992 |
|
- | Standard | 100V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 10µA @ 100V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 125°C |
|
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|
ON Semiconductor |
DIODE GEN PURP 100V 3A DO201AD |
7,128 |
|
- | Standard | 100V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 10µA @ 100V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 125°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 200V 3A DO201AD |
8,478 |
|
- | Standard | 200V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 10µA @ 200V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 125°C |
|
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|
ON Semiconductor |
DIODE GEN PURP 600V 3A DO201AD |
5,022 |
|
- | Standard | 600V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 10µA @ 600V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 125°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 600V 1A SMA |
8,298 |
|
- | Standard | 600V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 600V | - | Surface Mount | DO-214AC, SMA | SMA | -55°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 50V 1A AXIAL |
5,598 |
|
SWITCHMODE™ | Standard | 50V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 2µA @ 50V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 100V 1A AXIAL |
2,682 |
|
SWITCHMODE™ | Standard | 100V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 2µA @ 100V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 150V 1A AXIAL |
4,842 |
|
SWITCHMODE™ | Standard | 150V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 2µA @ 150V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 300V 1A AXIAL |
8,532 |
|
SWITCHMODE™ | Standard | 300V | 1A | 1.25V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 300V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 400V 1A AXIAL |
3,924 |
|
SWITCHMODE™ | Standard | 400V | 1A | 1.25V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 400V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 100V 15A TO220-2 |
6,498 |
|
SWITCHMODE™ | Standard | 100V | 15A | 1.05V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 100V | - | Through Hole | TO-220-2 | TO-220-2 | -65°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 150V 15A TO220-2 |
7,614 |
|
SWITCHMODE™ | Standard | 150V | 15A | 1.05V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 150V | - | Through Hole | TO-220-2 | TO-220-2 | -65°C ~ 175°C |
|
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|
ON Semiconductor |
DIODE GEN PURP 800V 1A AXIAL |
4,824 |
|
SWITCHMODE™ | Standard | 800V | 1A | 1.75V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 10µA @ 800V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 175°C |
|
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|
ON Semiconductor |
DIODE GEN PURP 200V 20A TO220AC |
8,514 |
|
SWITCHMODE™ | Standard | 200V | 20A | 1.1V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 95ns | 50µA @ 200V | - | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 175°C |
|
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|
ON Semiconductor |
DIODE GEN PURP 100V 2A AXIAL |
6,426 |
|
SWITCHMODE™ | Standard | 100V | 2A | 940mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 2µA @ 100V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 175°C |
|
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|
ON Semiconductor |
DIODE GEN PURP 1KV 2A AXIAL |
8,532 |
|
SWITCHMODE™ | Standard | 1000V | 2A | 2.2V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 10µA @ 1000V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 175°C |
|
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|
ON Semiconductor |
DIODE GEN PURP 1KV 2A AXIAL |
2,700 |
|
SWITCHMODE™ | Standard | 1000V | 2A | 2.2V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 10µA @ 1000V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 175°C |
|
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|
ON Semiconductor |
DIODE GEN PURP 100V 2A AXIAL |
6,210 |
|
SWITCHMODE™ | Standard | 100V | 2A | 940mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 2µA @ 100V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 175°C |
|
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|
ON Semiconductor |
DIODE GEN PURP 200V 2A AXIAL |
6,138 |
|
SWITCHMODE™ | Standard | 200V | 2A | 950mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 2µA @ 200V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 175°C |
|
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|
ON Semiconductor |
DIODE GEN PURP 200V 2A AXIAL |
7,614 |
|
SWITCHMODE™ | Standard | 200V | 2A | 950mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 2µA @ 200V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 175°C |
|
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|
ON Semiconductor |
DIODE GEN PURP 400V 2A AXIAL |
7,128 |
|
SWITCHMODE™ | Standard | 400V | 2A | 1.3V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 65ns | 5µA @ 400V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 400V 2A AXIAL |
5,490 |
|
SWITCHMODE™ | Standard | 400V | 2A | 1.3V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 65ns | 5µA @ 400V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 175°C |
|
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|
ON Semiconductor |
DIODE GEN PURP 600V 2A AXIAL |
3,438 |
|
SWITCHMODE™ | Standard | 600V | 2A | 1.35V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 600V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 600V 2A AXIAL |
7,902 |
|
SWITCHMODE™ | Standard | 600V | 2A | 1.35V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 600V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 175°C |