Microsemi Transistors - FETs, MOSFETs - Arrays
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Arrays
ManufacturerMicrosemi Corporation
Records 240
Page 5/8
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Microsemi |
MOSFET 2N-CH 1700V 53A SP1 |
5,364 |
|
- | 2 N Channel (Phase Leg) | Silicon Carbide (SiC) | 1700V (1.7kV) | 50A (Tc) | 60mOhm @ 50A, 20V | 2.3V @ 2.5mA (Typ) | 190nC @ 20V | 3080pF @ 1000V | 350W | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
|
|
Microsemi |
POWER MODULE - SIC |
6,858 |
|
- | 6 N-Channel (3-Phase Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 112A (Tc) | 33mOhm @ 60A, 20V | 3V @ 3mA | 408nC @ 20V | 7680pF @ 1000V | 714W | -40°C ~ 175°C (TJ) | Chassis Mount | SP6 | SP6 |
|
|
Microsemi |
MOSFET 2 N-CH 1200V 337A MODULE |
3,168 |
|
- | 2 N-Channel (Dual) | Silicon Carbide (SiC) | 1200V (1.2kV) | 337A (Tc) | 11mOhm @ 180A, 20V | 3V @ 9mA | 1224nC @ 20V | 23000pF @ 1000V | - | -40°C ~ 175°C (TJ) | Chassis Mount | Module | Module |
|
|
Microsemi |
POWER MODULE - SIC MOSFET |
8,982 |
|
- | 6 N-Channel (3-Phase Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 74A (Tc) | 34mOhm @ 50A, 20V | 4V @ 15mA | 161nC @ 5V | 2788pF @ 1000V | 375W | -40°C ~ 175°C (TJ) | Chassis Mount | Module | SP3 |
|
|
Microsemi |
MOSFET 2N-CH 1200V 220A SP3F |
3,978 |
|
- | 2 N Channel (Phase Leg) | Silicon Carbide (SiC) | 1200V (1.2kV) | 220A (Tc) | 12mOhm @ 150A, 20V | 2.4V @ 30mA (Typ) | 483nC @ 20V | 8400pF @ 1000V | 925W | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | SP3 |
|
|
Microsemi |
POWER MODULE - SIC |
6,408 |
|
- | 2 N-Channel (Dual), Schottky | Silicon Carbide (SiC) | 1200V (1.2kV) | 370A (Tc) | 10mOhm @ 200A, 20V | 3V @ 10mA | 1360nC @ 20V | - | 2300W | -40°C ~ 175°C (TJ) | Chassis Mount | SP6 | SP6 |
|
|
Microsemi |
MOSFET 2N-CH 1200V 295A SP3F |
5,796 |
|
- | 2 N Channel (Phase Leg) | Silicon Carbide (SiC) | 1200V (1.2kV) | 295A (Tc) | 9mOhm @ 200A, 20V | 2.4V @ 40mA (Typ) | 644nC @ 20V | 11000pF @ 1000V | 1250W | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | SP3 |
|
|
Microsemi |
POWER MODULE - SIC MOSFET |
2,826 |
|
- | 4 N-Channel | Silicon Carbide (SiC) | 1200V (1.2kV) | 147A (Tc) | 17mOhm @ 100A, 20V | 4V @ 30mA | 332nC @ 5V | 5576pF @ 1000V | 750W | -40°C ~ 175°C (TJ) | Chassis Mount | Module | SP3 |
|
|
Microsemi |
MOSFET 2N-CH 1700V 106A SP1 |
8,802 |
|
- | 2 N Channel (Phase Leg) | Silicon Carbide (SiC) | 1700V (1.7kV) | 100A (Tc) | 30mOhm @ 100A, 20V | 2.3V @ 5mA (Typ) | 380nC @ 20V | 6160pF @ 1000V | 700W | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
|
|
Microsemi |
MOSFET 6N-CH 1200V 147A SP6P |
2,340 |
|
- | 6 N-Channel (3-Phase Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 147A (Tc) | 17mOhm @ 100A, 20V | 2.4V @ 20mA (Typ) | 322nC @ 20V | 5600pF @ 1000V | 625W | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6-P |
|
|
Microsemi |
MOSFET 4N-CH 1200V 219A SP6C |
5,472 |
|
- | 4 N-Channel (Three Level Inverter) | Silicon Carbide (SiC) | 1200V (1.2kV) | 219A (Tc) | 12mOhm @ 150A, 20V | 2.4V @ 30mA (Typ) | 483nC @ 20V | 8400pF @ 1000V | 925W | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 |
|
|
Microsemi |
MOSFET 6N-CH 1200V 220A SP6P |
4,572 |
|
- | 6 N-Channel (3-Phase Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 220A (Tc) | 12mOhm @ 150A, 20V | 2.4V @ 30mA (Typ) | 483nC @ 20V | 8400pF @ 1000V | 925W | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6-P |
|
|
Microsemi |
MOSFET 2N-CH 600V 39A SP1 |
3,870 |
|
- | 2 N-Channel (Half Bridge) | Standard | 600V | 39A | 70mOhm @ 39A, 10V | 3.9V @ 2.7mA | 259nC @ 10V | 7000pF @ 25V | 250W | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
|
|
Microsemi |
MOSFET 2N-CH 600V 39A SP3 |
3,564 |
|
- | 2 N-Channel (Dual) | Standard | 600V | 39A | 70mOhm @ 39A, 10V | 3.9V @ 2.7mA | 259nC @ 10V | 7000pF @ 25V | 250W | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | SP3 |
|
|
Microsemi |
MOSFET 2N-CH 600V 72A SP3 |
7,902 |
|
- | 2 N-Channel (Dual) | Standard | 600V | 72A | 35mOhm @ 72A, 10V | 3.9V @ 5.4mA | 518nC @ 10V | 14000pF @ 25V | 416W | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | SP3 |
|
|
Microsemi |
MOSFET 2N-CH 600V 39A SP3 |
7,146 |
|
- | 2 N-Channel (Dual) | Standard | 600V | 39A | 70mOhm @ 39A, 10V | 3.9V @ 2.7mA | 259nC @ 10V | 7000pF @ 25V | 250W | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | SP3 |
|
|
Microsemi |
MOSFET 2N-CH 800V 42A SP4 |
4,464 |
|
- | 2 N-Channel (Half Bridge) | Standard | 800V | 42A | 100mOhm @ 21A, 10V | 3.9V @ 3mA | 273nC @ 10V | 6761pF @ 25V | 416W | -40°C ~ 150°C (TJ) | Chassis Mount | SP4 | SP4 |
|
|
Microsemi |
MOSFET 2N-CH 800V 28A SP1 |
3,042 |
|
- | 2 N-Channel (Half Bridge) | Standard | 800V | 28A | 150mOhm @ 14A, 10V | 3.9V @ 2mA | 180nC @ 10V | 4507pF @ 25V | 277W | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
|
|
Microsemi |
MOSFET 2N-CH 800V 56A SP6 |
2,520 |
|
- | 2 N-Channel (Half Bridge) | Standard | 800V | 56A | 75mOhm @ 28A, 10V | 3.9V @ 4mA | 364nC @ 10V | 9015pF @ 25V | 568W | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 |
|
|
Microsemi |
MOSFET 2N-CH 800V 15A SP3 |
4,446 |
|
- | 2 N-Channel (Dual) | Standard | 800V | 15A | 290mOhm @ 7.5A, 10V | 3.9V @ 1mA | 90nC @ 10V | 2254pF @ 25V | 156W | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | SP3 |
|
|
Microsemi |
MOSFET 2N-CH 800V 28A SP3 |
3,618 |
|
- | 2 N-Channel (Dual) | Standard | 800V | 28A | 150mOhm @ 14A, 10V | 3.9V @ 2mA | 180nC @ 10V | 4507pF @ 25V | 277W | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | SP3 |
|
|
Microsemi |
MOSFET 2N-CH 800V 15A SP3 |
6,336 |
|
- | 2 N-Channel (Dual) | Standard | 800V | 15A | 290mOhm @ 7.5A, 10V | 3.9V @ 1mA | 90nC @ 10V | 2254pF @ 25V | 156W | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | SP3 |
|
|
Microsemi |
MOSFET 4N-CH 800V 15A SP4 |
3,418 |
|
- | 4 N-Channel (H-Bridge) | Standard | 800V | 15A | 290mOhm @ 7.5A, 10V | 3.9V @ 1mA | 91nC @ 10V | 2254pF @ 25V | 156W | -40°C ~ 150°C (TJ) | Chassis Mount | SP4 | SP4 |
|
|
Microsemi |
MOSFET 4N-CH 800V 15A SP1 |
2,970 |
|
- | 4 N-Channel (H-Bridge) | Standard | 800V | 15A | 290mOhm @ 7.5A, 10V | 3.9V @ 1mA | 90nC @ 10V | 2254pF @ 25V | 156W | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
|
|
Microsemi |
MOSFET 6N-CH 75V 120A SP6-P |
7,902 |
|
- | 6 N-Channel (3-Phase Bridge) | Standard | 75V | 120A | 4.5mOhm @ 60A, 10V | 4V @ 1mA | 153nC @ 10V | 4530pF @ 25V | 138W | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6-P |
|
|
Microsemi |
MOSFET 2N-CH 1000V 68A LP8W |
3,546 |
|
- | 2 N-Channel (Half Bridge) | Standard | 1000V (1kV) | 68A | 120mOhm @ 34A, 10V | 5V @ 10mA | 616nC @ 10V | 17400pF @ 25V | 1250W | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | SP3 |
|
|
Microsemi |
MOSFET 2N-CH 1000V 36A SP4 |
6,876 |
|
- | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1000V (1kV) | 36A | 270mOhm @ 18A, 10V | 5V @ 5mA | 308nC @ 10V | 8700pF @ 25V | 694W | -40°C ~ 150°C (TJ) | Chassis Mount | SP4 | SP4 |
|
|
Microsemi |
MOSFET 2N-CH 1000V 21A SP1 |
7,884 |
|
- | 2 N-Channel (Half Bridge) | Standard | 1000V (1kV) | 21A | 480mOhm @ 18A, 10V | 5V @ 2.5mA | 305nC @ 10V | 7868pF @ 25V | 390W | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
|
|
Microsemi |
MOSFET 2N-CH 1000V 19A SP1 |
3,384 |
|
- | 2 N-Channel (Half Bridge) | Standard | 1000V (1kV) | 19A | 552mOhm @ 16A, 10V | 5V @ 2.5mA | 260nC @ 10V | 6800pF @ 25V | 357W | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
|
|
Microsemi |
MOSFET 2N-CH 1000V 22A SP3 |
5,904 |
|
- | 2 N-Channel (Dual) | Standard | 1000V (1kV) | 22A | 420mOhm @ 11A, 10V | 5V @ 2.5mA | 186nC @ 10V | 5200pF @ 25V | 390W | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | SP3 |