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Microsemi Rectifiers - Single

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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
ManufacturerMicrosemi Corporation
Records 2,560
Page 34/86
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
Diode Type
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
JANTX1N3645
Microsemi
DIODE GEN PURP 2KV 250MA AXIAL
3,186
Military, MIL-PRF-19500/279
Standard
2000V
250mA
5V @ 250mA
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 2000V
-
Through Hole
S, Axial
S, Axial
-65°C ~ 175°C
JANTXV1N6643U
Microsemi
DIODE GEN PURP 75V 300MA D-MELF
7,344
Military, MIL-PRF-19500/578
Standard
75V
300mA
1.2V @ 100mA
Fast Recovery =< 500ns, > 200mA (Io)
20ns
500nA @ 75V
5pF @ 0V, 1MHz
Surface Mount
SQ-MELF, D
D-5D
-65°C ~ 175°C
JANTX1N5553
Microsemi
DIODE GEN PURP 800V 5A AXIAL
8,784
Military, MIL-PRF-19500/420
Standard
800V
5A
1.3V @ 9A
Standard Recovery >500ns, > 200mA (Io)
2µs
1µA @ 800V
-
Through Hole
B, Axial
-
-65°C ~ 175°C
1N6858UR-1
Microsemi
SCHOTTKY RECTIFIER
3,508
*
-
-
-
-
-
-
-
-
-
-
-
-
JAN1N5190
Microsemi
DIODE GEN PURP 600V 3A AXIAL
5,796
Military, MIL-PRF-19500/420
Standard
600V
3A
1.5V @ 9A
Fast Recovery =< 500ns, > 200mA (Io)
400ns
2µA @ 600V
-
Through Hole
B, Axial
Axial
-65°C ~ 175°C
JANTX1N5553US
Microsemi
DIODE GEN PURP 800V 3A B-MELF
338
Military, MIL-PRF-19500/420
Standard
800V
3A
1.3V @ 9A
Standard Recovery >500ns, > 200mA (Io)
2µs
1µA @ 800V
-
Surface Mount
SQ-MELF, B
D-5B
-65°C ~ 175°C
JANTXV1N5554
Microsemi
DIODE GEN PURP 1KV 5A AXIAL
5,796
Military, MIL-PRF-19500/420
Standard
1000V
5A
1.3V @ 9A
Standard Recovery >500ns, > 200mA (Io)
2µs
1µA @ 1000V
-
Through Hole
B, Axial
-
-65°C ~ 175°C
JANTXV1N6642
Microsemi
DIODE GEN PURP 100V 300MA
900
Military, MIL-PRF-19500/578
Standard
100V
300mA
1.2V @ 100mA
Fast Recovery =< 500ns, > 200mA (Io)
20ns
500nA @ 100V
-
Through Hole
Axial
-
-65°C ~ 175°C
JANTX1N5416US
Microsemi
DIODE GEN PURP 100V 3A D5B
8,550
Military, MIL-PRF-19500/411
Standard
100V
3A
1.5V @ 9A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
1µA @ 100V
-
Surface Mount
SQ-MELF, B
D-5B
-65°C ~ 175°C
1N6627US
Microsemi
DIODE GEN PURP 440V 1.75A A-MELF
7,398
-
Standard
440V
1.75A
1.35V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
2µA @ 440V
40pF @ 10V, 1MHz
Surface Mount
SQ-MELF, A
A-MELF
-65°C ~ 150°C
JANTX1N6620
Microsemi
DIODE GEN PURP 220V 2A AXIAL
6,426
Military, MIL-PRF-19500/585
Standard
220V
2A
1.4V @ 1.2A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
500nA @ 220V
10pF @ 10V, 1MHz
Through Hole
A, Axial
Axial
-65°C ~ 150°C
1N6642UBCA
Microsemi
DIODE GEN PURPOSE
2,736
*
-
-
-
-
-
-
-
-
-
-
-
-
1N6642UBCC
Microsemi
DIODE GEN PURPOSE
5,472
*
-
-
-
-
-
-
-
-
-
-
-
-
JANTXV1N5615
Microsemi
DIODE GEN PURP 200V 1A AXIAL
8,766
Military, MIL-PRF-19500/429
Standard
200V
1A
1.6V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
500nA @ 200V
45pF @ 12V, 1MHz
Through Hole
A, Axial
-
-65°C ~ 175°C
JANTXV1N5417
Microsemi
DIODE GEN PURP 200V 3A AXIAL
4,212
Military, MIL-PRF-19500/411
Standard
200V
3A
1.5V @ 9A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
1µA @ 200V
-
Through Hole
B, Axial
-
-65°C ~ 175°C
1N6537
Microsemi
DIODE RECT ULT FAST REC A-PKG
7,236
*
-
-
-
-
-
-
-
-
-
-
-
-
JAN1N6623US
Microsemi
DIODE GEN PURP 880V 1A D5A
2,682
Military, MIL-PRF-19500/585
Standard
880V
1A
1.55V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
500nA @ 880V
10pF @ 10V, 1MHz
Surface Mount
SQ-MELF, A
D-5A
-65°C ~ 150°C
JANTXV1N6639US
Microsemi
SWITCHING DIODE
8,838
*
-
-
-
-
-
-
-
-
-
-
-
-
JANTXV1N5809US
Microsemi
DIODE GEN PURP 100V 3A B-MELF
2,214
Military, MIL-PRF-19500/477
Standard
100V
3A
875mV @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
5µA @ 100V
60pF @ 10V, 1MHz
Surface Mount
SQ-MELF, B
B, SQ-MELF
-65°C ~ 175°C
JANTXV1N5811US
Microsemi
DIODE GEN PURP 150V 3A B-MELF
6,102
Military, MIL-PRF-19500/477
Standard
150V
3A
875mV @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
5µA @ 150V
60pF @ 10V, 1MHz
Surface Mount
SQ-MELF, B
B, SQ-MELF
-65°C ~ 175°C
1N6538
Microsemi
DIODE RECT ULT FAST REC A-PKG
2,700
*
-
-
-
-
-
-
-
-
-
-
-
-
JANTX1N3595AUR-1
Microsemi
DIODE GP 125V 150MA DO213AA
6,678
Military, MIL-PRF-19500/241
Standard, Reverse Polarity
125V
150mA
920mV @ 100mA
Small Signal =< 200mA (Io), Any Speed
3µs
2nA @ 125V
-
Surface Mount
DO-213AA
DO-213AA
-65°C ~ 175°C
JANTX1N5187
Microsemi
DIODE GEN PURP 200V 3A AXIAL
5,184
Military, MIL-PRF-19500/424
Standard
200V
3A
1.5V @ 9A
Fast Recovery =< 500ns, > 200mA (Io)
200ns
2µA @ 200V
-
Through Hole
B, Axial
Axial
-65°C ~ 175°C
1N5822
Microsemi
DIODE SCHOTTKY 40V 3A AXIAL
4,536
Military, MIL-PRF-19500/620
Schottky
40V
3A
500mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 40V
-
Through Hole
B, Axial
-
-65°C ~ 125°C
1N6548
Microsemi
DIODE RECT ULT FAST REC A-PKG
5,706
*
-
-
-
-
-
-
-
-
-
-
-
-
1N6625US
Microsemi
DIODE GEN PURP 1.1KV 1A A-MELF
3,168
-
Standard
1100V
1A
1.75V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
60ns
1µA @ 1100V
10pF @ 10V, 1MHz
Surface Mount
SQ-MELF, A
A-MELF
-65°C ~ 150°C
JANTXV1N5550
Microsemi
DIODE GEN PURP 200V 5A AXIAL
448
Military, MIL-PRF-19500/420
Standard
200V
5A
1.2V @ 9A
Standard Recovery >500ns, > 200mA (Io)
2µs
1µA @ 200V
-
Through Hole
B, Axial
-
-65°C ~ 175°C
1N6075
Microsemi
DIODE GEN PURP 150V 850MA AXIAL
114
-
Standard
150V
850mA
2.04V @ 9.4A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
1µA @ 150V
-
Through Hole
A, Axial
-
-65°C ~ 155°C
JANTX1N5802
Microsemi
DIODE GEN PURP 50V 1A AXIAL
4,086
Military, MIL-PRF-19500/477
Standard
50V
1A
875mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
1µA @ 50V
25pF @ 10V, 1MHz
Through Hole
A, Axial
-
-65°C ~ 175°C
JANTX1N5622US
Microsemi
DIODE GEN PURP 1KV 1A D5A
7,956
Military, MIL-PRF-19500/427
Standard
1000V
1A
1.3V @ 3A
Standard Recovery >500ns, > 200mA (Io)
2µs
500nA @ 1000V
-
Surface Mount
SQ-MELF, A
D-5A
-65°C ~ 200°C