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Micron Technology Inc. Memory

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CategorySemiconductors / Memory ICs / Memory
ManufacturerMicron Technology Inc.
Records 8,604
Page 18/287
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
Memory Type
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
MT46V64M8P-5B:J TR
Micron Technology Inc.
IC DRAM 512M PARALLEL 66TSOP
5,994
-
Volatile
DRAM
SDRAM - DDR
512Mb (64M x 8)
Parallel
200MHz
15ns
700ps
2.5V ~ 2.7V
0°C ~ 70°C (TA)
Surface Mount
66-TSSOP (0.400", 10.16mm Width)
66-TSOP
MT41K128M16JT-107 AAT:K
Micron Technology Inc.
IC SDRAM DDR3L 2GB 96FBGA
3,924
Automotive, AEC-Q100
Volatile
DRAM
SDRAM - DDR3L
2Gb (128M x 16)
Parallel
933MHz
15ns
20ns
1.283V ~ 1.45V
-40°C ~ 105°C (TC)
Surface Mount
96-TFBGA
96-FBGA (8x14)
MT48LC2M32B2B5-6A IT:J TR
Micron Technology Inc.
IC DRAM 64M PARALLEL 90VFBGA
2,088
-
Volatile
DRAM
SDRAM
64Mb (2M x 32)
Parallel
167MHz
12ns
5.4ns
3V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
90-VFBGA
90-VFBGA (8x13)
MT48LC2M32B2B5-6A IT:J
Micron Technology Inc.
IC DRAM 64M PARALLEL 90VFBGA
2,502
-
Volatile
DRAM
SDRAM
64Mb (2M x 32)
Parallel
167MHz
12ns
5.4ns
3V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
90-VFBGA
90-VFBGA (8x13)
MT47H128M8SH-25E AAT:M
Micron Technology Inc.
IC DRAM 1G PARALLEL 60FBGA
7,380
-
Volatile
DRAM
SDRAM - DDR2
1Gb (128M x 8)
Parallel
400MHz
15ns
400ps
1.7V ~ 1.9V
-40°C ~ 105°C (TC)
Surface Mount
60-TFBGA
60-FBGA (10x18)
MT47H64M16NF-25E AAT:M
Micron Technology Inc.
IC DRAM 1G PARALLEL 84FBGA
5,004
-
Volatile
DRAM
SDRAM - DDR2
1Gb (64M x 16)
Parallel
400MHz
15ns
400ps
1.7V ~ 1.9V
-40°C ~ 105°C (TC)
Surface Mount
84-TFBGA
84-FBGA (8x12.5)
MT46V64M8P-5B:J
Micron Technology Inc.
IC DRAM 512M PARALLEL 66TSOP
7,961
-
Volatile
DRAM
SDRAM - DDR
512Mb (64M x 8)
Parallel
200MHz
15ns
700ps
2.5V ~ 2.7V
0°C ~ 70°C (TA)
Surface Mount
66-TSSOP (0.400", 10.16mm Width)
66-TSOP
MT41K128M16JT-125 XIT:K TR
Micron Technology Inc.
IC DRAM 2G PARALLEL 96FBGA
7,488
-
Volatile
DRAM
SDRAM - DDR3L
2Gb (128M x 16)
Parallel
800MHz
-
13.75ns
1.283V ~ 1.45V
-40°C ~ 95°C (TC)
Surface Mount
96-TFBGA
96-FBGA (8x14)
MT41K256M8DA-107 AAT:K TR
Micron Technology Inc.
IC DRAM 2G PARALLEL 933MHZ
2,790
-
Volatile
DRAM
SDRAM - DDR3L
2Gb (256M x 8)
Parallel
933MHz
-
20ns
1.283V ~ 1.45V
-40°C ~ 105°C (TC)
Surface Mount
78-TFBGA
78-FBGA (8x10.5)
MT29F4G01AAADDHC-ITX:D TR
Micron Technology Inc.
IC FLASH 4G SPI 63VFBGA
3,060
-
Non-Volatile
FLASH
FLASH - NAND
4Gb (4G x 1)
SPI
-
-
-
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
63-VFBGA
63-VFBGA (10.5x13)
MT29F4G08ABADAH4-ITX:D TR
Micron Technology Inc.
IC FLASH 4G PARALLEL 63VFBGA
6,300
-
Non-Volatile
FLASH
FLASH - NAND
4Gb (512M x 8)
Parallel
-
-
-
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
63-VFBGA
63-VFBGA (9x11)
MT29F4G08ABBDAH4-ITX:D TR
Micron Technology Inc.
IC FLASH 4G PARALLEL 63VFBGA
7,128
-
Non-Volatile
FLASH
FLASH - NAND
4Gb (512M x 8)
Parallel
-
-
-
1.7V ~ 1.95V
-40°C ~ 85°C (TA)
Surface Mount
63-VFBGA
63-VFBGA (9x11)
MT53E128M16D1DS-046 AIT:A TR
Micron Technology Inc.
IC DRAM LPDDR4 WFBGA
6,606
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MT53E128M16D1DS-053 AIT:A TR
Micron Technology Inc.
IC DRAM LPDDR4 WFBGA
8,082
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MT48LC16M16A2B4-6A AAT:G
Micron Technology Inc.
IC DRAM 256M PARALLEL 54VFBGA
4,662
Automotive, AEC-Q100
Volatile
DRAM
SDRAM
256Mb (16M x 16)
Parallel
167MHz
12ns
5.4ns
3V ~ 3.6V
-40°C ~ 105°C (TA)
Surface Mount
54-VFBGA
54-VFBGA (8x8)
MT48LC16M16A2P-6A AAT:G
Micron Technology Inc.
IC DRAM 256M PARALLEL 54TSOP
832
Automotive, AEC-Q100
Volatile
DRAM
SDRAM
256Mb (16M x 16)
Parallel
167MHz
12ns
5.4ns
3V ~ 3.6V
-40°C ~ 105°C (TA)
Surface Mount
54-TSOP (0.400", 10.16mm Width)
54-TSOP II
MT47H64M8SH-25E AIT:H TR
Micron Technology Inc.
IC DRAM 512M PARALLEL 60FBGA
2,016
-
Volatile
DRAM
SDRAM - DDR2
512Mb (64M x 8)
Parallel
400MHz
15ns
400ps
1.7V ~ 1.9V
-40°C ~ 95°C (TC)
Surface Mount
60-TFBGA
60-FBGA (10x18)
MT47H32M16NF-25E AIT:H TR
Micron Technology Inc.
IC SDRAM DDR2 512M 84FBGA
4,878
Automotive, AEC-Q100
Volatile
DRAM
SDRAM - DDR2
512M (32M x 16)
Parallel
400MHz
15ns
400ps
1.7V ~ 1.9V
-40°C ~ 85°C (TA)
Surface Mount
84-TFBGA
84-FBGA (8x12.5)
MT41K256M8DA-107 AAT:K
Micron Technology Inc.
IC DRAM 2G PARALLEL 933MHZ
2,322
-
Volatile
DRAM
SDRAM - DDR3L
2Gb (256M x 8)
Parallel
933MHz
-
20ns
1.283V ~ 1.45V
-40°C ~ 105°C (TC)
Surface Mount
78-TFBGA
78-FBGA (8x10.5)
EDB1316BDBH-1DIT-F-D
Micron Technology Inc.
IC DRAM 1G PARALLEL 134VFBGA
2,862
-
Volatile
DRAM
SDRAM - Mobile LPDDR2
1Gb (64M x 16)
Parallel
533MHz
-
-
1.14V ~ 1.95V
-40°C ~ 85°C (TC)
Surface Mount
134-VFBGA
134-VFBGA (10x11.5)
MT48H16M32LFB5-6 IT:C
Micron Technology Inc.
IC DRAM 512M PARALLEL 90VFBGA
7,434
-
Volatile
DRAM
SDRAM - Mobile LPSDR
512Mb (16M x 32)
Parallel
166MHz
15ns
5ns
1.7V ~ 1.95V
-40°C ~ 85°C (TA)
Surface Mount
90-VFBGA
90-VFBGA (8x13)
MT48H32M16LFB4-6 IT:C
Micron Technology Inc.
IC DRAM 512M PARALLEL 54VFBGA
7,254
-
Volatile
DRAM
SDRAM - Mobile LPSDR
512Mb (32M x 16)
Parallel
166MHz
15ns
5ns
1.7V ~ 1.95V
-40°C ~ 85°C (TA)
Surface Mount
54-VFBGA
54-VFBGA (8x8)
MT41K256M16V00HWC1
Micron Technology Inc.
IC FLASH NAND 32GX8 TSOP
2,394
*
-
-
-
-
-
-
-
-
-
-
-
-
-
MT53E128M16D1DS-046 AIT:A
Micron Technology Inc.
IC DRAM LPDDR4 WFBGA
7,632
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MT53E128M16D1DS-053 AIT:A
Micron Technology Inc.
IC DRAM LPDDR4 WFBGA
6,714
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MT29F32G08CBADBWP-12IT:D
Micron Technology Inc.
IC FLASH 32G PARALLEL 83MHZ
5,212
-
Non-Volatile
FLASH
FLASH - NAND
32Gb (4G x 8)
Parallel
83MHz
-
-
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP I
MT48LC16M16A2B4-6A:G TR
Micron Technology Inc.
IC DRAM 256M PARALLEL 54VFBGA
7,506
-
Volatile
DRAM
SDRAM
256Mb (16M x 16)
Parallel
167MHz
12ns
5.4ns
3V ~ 3.6V
0°C ~ 70°C (TA)
Surface Mount
54-VFBGA
54-VFBGA (8x8)
MT47H32M16NF-25E AIT:H
Micron Technology Inc.
IC DRAM 512M PARALLEL 84FBGA
5,166
-
Volatile
DRAM
SDRAM - DDR2
512Mb (32M x 16)
Parallel
400MHz
15ns
400ps
1.7V ~ 1.9V
-40°C ~ 95°C (TC)
Surface Mount
84-TFBGA
84-FBGA (8x12.5)
MT47H64M8SH-25E AIT:H
Micron Technology Inc.
IC DRAM 512M PARALLEL 60FBGA
7,236
-
Volatile
DRAM
SDRAM - DDR2
512Mb (64M x 8)
Parallel
400MHz
15ns
400ps
1.7V ~ 1.9V
-40°C ~ 95°C (TC)
Surface Mount
60-TFBGA
60-FBGA (10x18)
MT29F64G08CBABBWPR:B TR
Micron Technology Inc.
IC FLASH 64G PARALLEL 48TSOP
2,952
-
Non-Volatile
FLASH
FLASH - NAND
64Gb (8G x 8)
Parallel
-
-
-
2.7V ~ 3.6V
0°C ~ 70°C (TA)
-
-
-