IXYS Integrated Circuits Division PMIC - Gate Drivers
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CategorySemiconductors / Power Management ICs / PMIC - Gate Drivers
ManufacturerIXYS Integrated Circuits Division
Records 125
Page 1/5
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Driven Configuration | Channel Type | Number of Drivers | Gate Type | Voltage - Supply | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | Input Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IXYS Integrated Circuits Division |
IC MOSFET DVR NONINV 1.5A 8-DFN |
113,856 |
|
- | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 30V | 0.8V, 2.4V | 1.5A, 1.5A | Non-Inverting | - | 10ns, 8ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN (3x3) |
|
|
|
IXYS Integrated Circuits Division |
IC MOSFET DRIVER 1.5A 8SOIC |
105,936 |
|
- | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 30V | 0.8V, 2.4V | 1.5A, 1.5A | Non-Inverting | - | 10ns, 8ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
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|
IXYS Integrated Circuits Division |
IC MOSFET DVR INV/NON 1.5A 8-DFN |
30,762 |
|
- | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 30V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting, Non-Inverting | - | 10ns, 8ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN (3x3) |
|
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|
IXYS Integrated Circuits Division |
IC GATE DVR 9A NON-INV 8DFN |
51,474 |
|
- | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 9A, 9A | Non-Inverting | - | 22ns, 15ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN-EP (5x4) |
|
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IXYS Integrated Circuits Division |
IC GATE DVR 9A NON-INV 8SOIC |
58,356 |
|
- | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 9A, 9A | Non-Inverting | - | 22ns, 15ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
|
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|
IXYS Integrated Circuits Division |
IC GATE DVR 9A NON-INV 8-SOIC |
87,306 |
|
- | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 9A, 9A | Non-Inverting | - | 22ns, 15ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
|
IXYS Integrated Circuits Division |
IC GATE DVR 4A DUAL NONINV 8SOIC |
21,198 |
|
- | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 4A, 4A | Non-Inverting | - | 9ns, 8ns | -40°C ~ 125°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
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|
IXYS Integrated Circuits Division |
IC GATE DVR 4A DUAL ENABLE 8SOIC |
22,722 |
|
- | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 4A, 4A | Non-Inverting | - | 9ns, 8ns | -40°C ~ 125°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
|
IXYS Integrated Circuits Division |
IC GATE DVR 9A NON-INV 8-SOIC |
2,397 |
|
- | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 9A, 9A | Non-Inverting | - | 22ns, 15ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
|
|
|
IXYS Integrated Circuits Division |
IC GATE DVR 4A DUAL NONINV 8SOIC |
20,202 |
|
- | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 4A, 4A | Non-Inverting | - | 9ns, 8ns | -40°C ~ 125°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
|
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|
IXYS Integrated Circuits Division |
IC GATE DVR 4A DUAL ENABLE 8SOIC |
13,134 |
|
- | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 4A, 4A | Non-Inverting | - | 9ns, 8ns | -40°C ~ 125°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
|
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|
IXYS Integrated Circuits Division |
MOSFET N-CH 14A LO SIDE TO-220-5 |
19,698 |
|
- | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 14A, 14A | Non-Inverting | - | 25ns, 18ns | -55°C ~ 150°C (TJ) | Through Hole | TO-220-5 | TO-220-5 |
|
|
|
IXYS Integrated Circuits Division |
IC GATE DRIVER LOW SIDE 5TO263 |
25,278 |
|
- | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 12.5V ~ 35V | 0.8V, 3.5V | 30A, 30A | Non-Inverting | - | 11ns, 11ns | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-6, D²Pak (5 Leads + Tab), TO-263BA | TO-263-5 |
|
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|
IXYS Integrated Circuits Division |
IC GATE DRIVER LOW SIDE 5TO220 |
21,096 |
|
- | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 12.5V ~ 35V | 0.8V, 3.5V | 30A, 30A | Non-Inverting | - | 11ns, 11ns | -55°C ~ 150°C (TJ) | Through Hole | TO-220-5 | TO-220-5 |
|
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|
IXYS Integrated Circuits Division |
IC GATE DRIVER LOW SIDE TO-263-5 |
13,836 |
|
- | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 9V ~ 35V | 0.8V, 3.5V | 30A, 30A | Non-Inverting | - | 11ns, 11ns | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-6, D²Pak (5 Leads + Tab), TO-263BA | TO-263-5 |
|
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IXYS Integrated Circuits Division |
IC MOSFET DRIVER 1.5A 8SOIC |
14,916 |
|
- | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 30V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting, Non-Inverting | - | 10ns, 8ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
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IXYS Integrated Circuits Division |
5-AMP DUAL LOW-SIDE MOSFET DRIVE |
18,168 |
|
- | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 5V ~ 20V | 0.8V, 2.5V | 5A, 5A | Non-Inverting | - | 7ns, 7ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC |
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IXYS Integrated Circuits Division |
DUAL LOW SIDE MOSFET DRIVER |
29,268 |
|
- | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 2A, 2A | Non-Inverting | - | 7.5ns, 6.5ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
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IXYS Integrated Circuits Division |
MOSFET N-CH 2A DUAL LO SIDE 8-SO |
15,804 |
|
- | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 2A, 2A | Inverting | - | 7.5ns, 6.5ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
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IXYS Integrated Circuits Division |
IC GATE DVR 9A NON-INV 8-DIP |
17,970 |
|
- | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 9A, 9A | Non-Inverting | - | 22ns, 15ns | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP |
|
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|
IXYS Integrated Circuits Division |
IC GATE DVR 4A INV 8-SOIC |
20,214 |
|
- | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 4A, 4A | Inverting | - | 9ns, 8ns | -40°C ~ 125°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
|
IXYS Integrated Circuits Division |
IC GATE DVR 9A NON-INV 8-SOIC |
16,380 |
|
- | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 9A, 9A | Non-Inverting | - | 22ns, 15ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
|
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|
IXYS Integrated Circuits Division |
IC GATE DVR 4A DUAL IN/NON 8SOIC |
25,878 |
|
- | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 4A, 4A | Inverting, Non-Inverting | - | 9ns, 8ns | -40°C ~ 125°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
|
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IXYS Integrated Circuits Division |
IC GATE DVR 4A INV 8-SOIC |
20,592 |
|
- | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 4A, 4A | Inverting | - | 9ns, 8ns | -40°C ~ 125°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
|
|
|
IXYS Integrated Circuits Division |
IC GATE DVR 9A DUAL HS TO263-5 |
17,028 |
|
- | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 9A, 9A | Inverting | - | 22ns, 15ns | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-6, D²Pak (5 Leads + Tab), TO-263BA | TO-263-5 |
|
|
|
IXYS Integrated Circuits Division |
IC GATE DVR 9A DUAL HS TO220-5 |
14,772 |
|
- | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 9A, 9A | Non-Inverting | - | 22ns, 15ns | -55°C ~ 150°C (TJ) | Through Hole | TO-220-5 | TO-220-5 |
|
|
|
IXYS Integrated Circuits Division |
IC GATE DRIVER LOW SIDE 5TO263 |
7,548 |
|
- | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 12.5V ~ 35V | 0.8V, 3.5V | 30A, 30A | Inverting | - | 11ns, 11ns | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-6, D²Pak (5 Leads + Tab), TO-263BA | TO-263-5 |
|
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|
IXYS Integrated Circuits Division |
1200V HIGH AND LOW SIDE GATE DRI |
13,896 |
|
- | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 15V ~ 20V | 6V, 9.5V | 2A, 2A | Non-Inverting | 1200V | 9.4ns, 9.7ns | -40°C ~ 150°C (TJ) | Surface Mount | 28-SOIC (0.295", 7.50mm Width) | 28-SOIC |
|
|
|
IXYS Integrated Circuits Division |
IC GATE DRIVER LOW SIDE 5TO263 |
8,802 |
|
- | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 12.5V ~ 35V | 0.8V, 3.5V | 30A, 30A | Non-Inverting | - | 11ns, 11ns | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-6, D²Pak (5 Leads + Tab), TO-263BA | TO-263-5 |
|
|
|
IXYS Integrated Circuits Division |
IC MOSFET DRIVER 1.5A 8SOIC |
16,104 |
|
- | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 30V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting | - | 10ns, 8ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |