Honeywell Aerospace Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
ManufacturerHoneywell Aerospace
Records 4
Page 1/1
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Honeywell Aerospace |
MOSFET N-CH 55V 4-PIN |
2,214 |
|
HTMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | - | 5V | 400mOhm @ 100mA, 5V | 2.4V @ 100µA | 4.3nC @ 5V | 10V | 290pF @ 28V | - | 50W (Tj) | -55°C ~ 225°C (TJ) | Through Hole | 4-Power Tab | 4-SIP |
|
|
|
Honeywell Aerospace |
MOSFET N-CH 55V 8-DIP |
2,988 |
|
HTMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | - | 5V | 400mOhm @ 100mA, 5V | 2.4V @ 100µA | 4.3nC @ 5V | 10V | 290pF @ 28V | - | 50W (Tj) | -55°C ~ 225°C (TJ) | Through Hole | 8-CDIP-EP | 8-CDIP Exposed Pad |
|
|
|
Honeywell Aerospace |
MOSFET N-CH 55V 8-DIP |
4,824 |
|
HTMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | - | 5V | 400mOhm @ 100mA, 5V | 2.4V @ 100µA | 4.3nC @ 5V | 10V | 290pF @ 28V | - | 50W (Tj) | - | Through Hole | - | 8-CDIP Exposed Pad |
|
|
|
Honeywell Aerospace |
MOSFET N-CH 55V 4-PIN |
8,946 |
|
HTMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | - | 5V | 400mOhm @ 100mA, 5V | 2.4V @ 100µA | 4.3nC @ 5V | 10V | 290pF @ 28V | - | 50W (Tj) | - | Through Hole | - | - |