Global Power Technologies Group Rectifiers - Single
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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
ManufacturerGlobal Power Technologies Group
Records 65
Page 2/3
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Global Power Technologies Group |
DIODE SCHOTTKY 1.2KV 8A TO220-2 |
5,472 |
|
Amp+™ | Silicon Carbide Schottky | 1200V | 8A | 1.7V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 1200V | 477pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 135°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 600V 12A TO220-2 |
6,732 |
|
Amp+™ | Silicon Carbide Schottky | 600V | 12A (DC) | 1.7V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 600V | 487pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 135°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 600V 12A TO263-2 |
4,482 |
|
Amp+™ | Silicon Carbide Schottky | 600V | 12A (DC) | 1.7V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 600V | 487pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-2 | -55°C ~ 135°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 1.2KV 15A TO220-2 |
2,034 |
|
Amp+™ | Silicon Carbide Schottky | 1200V | 15A (DC) | 1.7V @ 15A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 1200V | 895pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 135°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 1200V 15A TO247-2 |
3,582 |
|
Amp+™ | Silicon Carbide Schottky | 1200V | 15A (DC) | 1.7V @ 15A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 1200V | 895pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 135°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 600V 24A TO247-2 |
2,016 |
|
Amp+™ | Silicon Carbide Schottky | 600V | 24A (DC) | 1.7V @ 24A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 600V | 973pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 135°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 1200V 81A TO247-2 |
8,622 |
|
Amp+™ | Silicon Carbide Schottky | 1200V | 81A | 1.7V @ 30A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 1200V | 1790pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 135°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 1.2KV 30A TO247-2 |
7,002 |
|
Amp+™ | Silicon Carbide Schottky | 1200V | 30A (DC) | 1.7V @ 30A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 1200V | 1790pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 135°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 600V 36A TO247-2 |
4,482 |
|
Amp+™ | Silicon Carbide Schottky | 600V | 36A (DC) | 1.7V @ 36A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 600V | 1460pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 135°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 1.2KV 50A TO247-2 |
7,146 |
|
Amp+™ | Silicon Carbide Schottky | 1200V | 50A (DC) | 1.7V @ 50A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 1200V | 2984pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 135°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTT 1.2KV 60A TO247-2 |
7,614 |
|
Amp+™ | Silicon Carbide Schottky | 1200V | 60A (DC) | 1.7V @ 60A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 1200V | 3581pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 135°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 1.2KV 5A TO220-2 |
5,706 |
|
Amp+™ | Silicon Carbide Schottky | 1200V | 5A (DC) | 1.8V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 10µA @ 1200V | 317pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 1.2KV 5A DPAK-2 |
3,168 |
|
Amp+™ | Silicon Carbide Schottky | 1200V | 5A | 1.8V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 10µA @ 1200V | 317pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2L (DPAK) | -55°C ~ 175°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 1700V 5A TO247-2 |
4,860 |
|
Amp+™ | Silicon Carbide Schottky | 1700V | 5A (DC) | 1.75V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 10µA @ 1700V | 406pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 650V 6A TO220-2 |
225 |
|
Amp+™ | Silicon Carbide Schottky | 650V | 6A | 1.65V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 60µA @ 650V | 316pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 650V 6A TO252-2 |
8,460 |
|
Amp+™ | Silicon Carbide Schottky | 650V | 6A (DC) | 1.65V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 60µA @ 650V | 316pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2L (DPAK) | -55°C ~ 175°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 1.2KV 10A TO220-2 |
8,586 |
|
Amp+™ | Silicon Carbide Schottky | 1200V | 10A | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 20µA @ 1200V | 635pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 1.2KV 10A TO247-2 |
5,976 |
|
Amp+™ | Silicon Carbide Schottky | 1200V | 10A | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 20µA @ 1200V | 635pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 1.2KV 10A TO252-2 |
4,824 |
|
Amp+™ | Silicon Carbide Schottky | 1200V | 10A (DC) | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 20µA @ 1200V | 635pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2L (DPAK) | -55°C ~ 175°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 1.7KV 10A TO247-2 |
3,330 |
|
Amp+™ | Silicon Carbide Schottky | 1700V | 10A | 1.75V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 20µA @ 1700V | 812pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 1.2KV 20A TO247-2 |
231 |
|
Amp+™ | Silicon Carbide Schottky | 1200V | 20A (DC) | 1.8V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 40µA @ 1200V | 1270pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 1.7KV 20A TO247-2 |
7,938 |
|
Amp+™ | Silicon Carbide Schottky | 1700V | 20A (DC) | 1.75V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 40µA @ 1700V | 1624pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 1.2KV 30A TO247-2 |
5,724 |
|
Amp+™ | Silicon Carbide Schottky | 1200V | 30A (DC) | 1.8V @ 30A | No Recovery Time > 500mA (Io) | 0ns | 60µA @ 1200V | 1905pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 1200V 15A TO247-2 |
5,742 |
|
Amp+™ | Silicon Carbide Schottky | 1200V | 15A (DC) | 1.8V @ 15A | No Recovery Time > 500mA (Io) | 0ns | 30µA @ 1200V | 54pF @ 1200V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 650V 30A TO220-2 |
1,559 |
|
Amp+™ | Silicon Carbide Schottky | 650V | 30A (DC) | 1.65V @ 10A | No Recovery Time > 500mA (Io) | - | 100µA @ 650V | 527pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 650V 30A TO252 |
3,726 |
|
Amp+™ | Silicon Carbide Schottky | 650V | 30A (DC) | 1.65V @ 10A | No Recovery Time > 500mA (Io) | - | 100µA @ 650V | 527pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | -55°C ~ 175°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 650V 58A TO247-2 |
5,605 |
|
Amp+™ | Silicon Carbide Schottky | 650V | 58A (DC) | 1.65V @ 20A | No Recovery Time > 500mA (Io) | - | 200µA @ 650V | 1054pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTKY 1.2KV 182A TO247-2 |
8,406 |
|
Amp+™ | Silicon Carbide Schottky | 1200V | 182A (DC) | 1.8V @ 60A | No Recovery Time > 500mA (Io) | - | 500µA @ 1200V | 3809pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 600V 50A TO247-2 |
8,118 |
|
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|
Global Power Technologies Group |
DIODE SCHOTTKY 1.2KV 50A TO247-2 |
5,292 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |