ZXMN6A11GTC Datasheet
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Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 3.1A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 120mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 5.7nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 330pF @ 40V FET Feature - Power Dissipation (Max) 2W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-223 Package / Case TO-261-4, TO-261AA |
Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 3.1A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 120mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 5.7nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 330pF @ 40V FET Feature - Power Dissipation (Max) 2W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-223 Package / Case TO-261-4, TO-261AA |
