ZXMC4A16DN8TA Datasheet
Diodes Incorporated Manufacturer Diodes Incorporated Series - FET Type N and P-Channel Complementary FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 5.2A (Ta), 4.7A (Ta) Rds On (Max) @ Id, Vgs 50mOhm @ 4.5A, 10V, 60mOhm @ 3.8A, 10V Vgs(th) (Max) @ Id 1V @ 250mA (Min) Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 770pF @ 40V, 1000pF @ 20V Power - Max 2.1W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |
Diodes Incorporated Manufacturer Diodes Incorporated Series - FET Type N and P-Channel Complementary FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 5.2A (Ta), 4.7A (Ta) Rds On (Max) @ Id, Vgs 50mOhm @ 4.5A, 10V, 60mOhm @ 3.8A, 10V Vgs(th) (Max) @ Id 1V @ 250mA (Min) Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 770pF @ 40V, 1000pF @ 20V Power - Max 2.1W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |