WPB4001-1E Datasheet
WPB4001-1E Datasheet
Total Pages: 5
Size: 247.23 KB
ON Semiconductor
Website: http://www.onsemi.com/
This datasheet covers 1 part numbers:
WPB4001-1E
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Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 26A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 260mOhm @ 13A, 10V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 87nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 2250pF @ 30V FET Feature - Power Dissipation (Max) 2.5W (Ta), 220W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-3P-3L Package / Case TO-3P-3, SC-65-3 |
