VS-GT400TH120N Datasheet
VS-GT400TH120N Datasheet
Total Pages: 6
Size: 128.04 KB
Vishay Semiconductor Diodes Division
This datasheet covers 1 part numbers:
VS-GT400TH120N
Vishay Semiconductor Diodes Division Manufacturer Vishay Semiconductor Diodes Division Series - IGBT Type Trench Configuration Half Bridge Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 600A Power - Max 2119W Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 400A Current - Collector Cutoff (Max) 5mA Input Capacitance (Cies) @ Vce 28.8nF @ 25V Input Standard NTC Thermistor No Operating Temperature 150°C (TJ) Mounting Type Chassis Mount Package / Case Double INT-A-PAK (3 + 8) Supplier Device Package Double INT-A-PAK |