VS-GT200TP065N Datasheet
VS-GT200TP065N Datasheet
Total Pages: 9
Size: 140.7 KB
Vishay Semiconductor Diodes Division
This datasheet covers 1 part numbers:
VS-GT200TP065N
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Manufacturer Vishay Semiconductor Diodes Division Series - IGBT Type Trench Configuration Half Bridge Voltage - Collector Emitter Breakdown (Max) 650V Current - Collector (Ic) (Max) 221A Power - Max 600W Vce(on) (Max) @ Vge, Ic 2.12V @ 15V, 200A Current - Collector Cutoff (Max) 60µA Input Capacitance (Cies) @ Vce - Input Standard NTC Thermistor No Operating Temperature -40°C ~ 175°C (TJ) Mounting Type Chassis Mount Package / Case INT-A-Pak Supplier Device Package INT-A-PAK |
