VS-GB300TH120N Datasheet
VS-GB300TH120N Datasheet
Total Pages: 7
Size: 127.6 KB
Vishay Semiconductor Diodes Division
This datasheet covers 1 part numbers:
VS-GB300TH120N
Vishay Semiconductor Diodes Division Manufacturer Vishay Semiconductor Diodes Division Series - IGBT Type - Configuration Half Bridge Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 500A Power - Max 1645W Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 300A Current - Collector Cutoff (Max) 5mA Input Capacitance (Cies) @ Vce 21.2nF @ 25V Input Standard NTC Thermistor No Operating Temperature 150°C (TJ) Mounting Type Chassis Mount Package / Case Double INT-A-PAK (3 + 4) Supplier Device Package Double INT-A-PAK |