VS-GB200TS60NPBF Datasheet
VS-GB200TS60NPBF Datasheet
Total Pages: 9
Size: 194.25 KB
Vishay Semiconductor Diodes Division
This datasheet covers 1 part numbers:
VS-GB200TS60NPBF
|
Manufacturer Vishay Semiconductor Diodes Division Series - IGBT Type NPT Configuration Half Bridge Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 209A Power - Max 781W Vce(on) (Max) @ Vge, Ic 2.84V @ 15V, 200A Current - Collector Cutoff (Max) 200µA Input Capacitance (Cies) @ Vce - Input Standard NTC Thermistor No Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount Package / Case INT-A-PAK (3 + 4) Supplier Device Package INT-A-PAK |
