VS-GB100TH120U Datasheet
VS-GB100TH120U Datasheet
Total Pages: 8
Size: 130.18 KB
Vishay Semiconductor Diodes Division
This datasheet covers 1 part numbers:
VS-GB100TH120U
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Manufacturer Vishay Semiconductor Diodes Division Series - IGBT Type NPT Configuration Half Bridge Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 200A Power - Max 1136W Vce(on) (Max) @ Vge, Ic 3.6V @ 15V, 100A Current - Collector Cutoff (Max) 5mA Input Capacitance (Cies) @ Vce 8.45nF @ 20V Input Standard NTC Thermistor No Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount Package / Case Double INT-A-PAK (3 + 4) Supplier Device Package Double INT-A-PAK |
