VS-GA100TS60SF Datasheet
Vishay Semiconductor Diodes Division Manufacturer Vishay Semiconductor Diodes Division Series - IGBT Type PT Configuration Half Bridge Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 220A Power - Max 780W Vce(on) (Max) @ Vge, Ic 1.28V @ 15V, 100A Current - Collector Cutoff (Max) 1mA Input Capacitance (Cies) @ Vce 16.25nF @ 30V Input Standard NTC Thermistor No Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount Package / Case INT-A-Pak Supplier Device Package INT-A-PAK |
Vishay Semiconductor Diodes Division Manufacturer Vishay Semiconductor Diodes Division Series - IGBT Type PT Configuration Half Bridge Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 220A Power - Max 780W Vce(on) (Max) @ Vge, Ic 1.28V @ 15V, 100A Current - Collector Cutoff (Max) 1mA Input Capacitance (Cies) @ Vce 16.25nF @ 30V Input Standard NTC Thermistor No Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount Package / Case INT-A-Pak Supplier Device Package INT-A-PAK |