VS-FB190SA10 Datasheet
VS-FB190SA10 Datasheet
Total Pages: 9
Size: 312.56 KB
Vishay Semiconductor Diodes Division
This datasheet covers 1 part numbers:
VS-FB190SA10
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Manufacturer Vishay Semiconductor Diodes Division Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 190A Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 6.5mOhm @ 180A, 10V Vgs(th) (Max) @ Id 4.35V @ 250µA Gate Charge (Qg) (Max) @ Vgs 250nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 10700pF @ 25V FET Feature - Power Dissipation (Max) 568W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Chassis Mount Supplier Device Package SOT-227 Package / Case SOT-227-4, miniBLOC |
