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VS-63CTQ100-N3 Datasheet

VS-63CTQ100-N3 Datasheet
Total Pages: 7
Size: 156.06 KB
Vishay Semiconductor Diodes Division
This datasheet covers 2 part numbers: VS-63CTQ100-N3, VS-63CTQ100GPBF
VS-63CTQ100-N3 Datasheet Page 1
VS-63CTQ100-N3 Datasheet Page 2
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VS-63CTQ100-N3 Datasheet Page 7
VS-63CTQ100-N3

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

-

Diode Configuration

1 Pair Common Cathode

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

100V

Current - Average Rectified (Io) (per Diode)

30A

Voltage - Forward (Vf) (Max) @ If

820mV @ 30A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

300µA @ 100V

Operating Temperature - Junction

175°C (Max)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220AB

VS-63CTQ100GPBF

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

-

Diode Configuration

1 Pair Common Cathode

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

100V

Current - Average Rectified (Io) (per Diode)

30A

Voltage - Forward (Vf) (Max) @ If

820mV @ 30A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

300µA @ 100V

Operating Temperature - Junction

175°C (Max)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220AB