VMO650-01F Datasheet
VMO650-01F Datasheet
Total Pages: 2
Size: 46.62 KB
IXYS
This datasheet covers 1 part numbers:
VMO650-01F
|
Manufacturer IXYS Series HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 690A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.8mOhm @ 500mA, 10V Vgs(th) (Max) @ Id 6V @ 130mA Gate Charge (Qg) (Max) @ Vgs 2300nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 59000pF @ 25V FET Feature - Power Dissipation (Max) 2500W (Tc) Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount Supplier Device Package Y3-DCB Package / Case Y3-DCB |
