VMO580-02F Datasheet
VMO580-02F Datasheet
Total Pages: 2
Size: 49.19 KB
IXYS
This datasheet covers 1 part numbers:
VMO580-02F
|
Manufacturer IXYS Series HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 580A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3.8mOhm @ 430A, 10V Vgs(th) (Max) @ Id 4V @ 50mA Gate Charge (Qg) (Max) @ Vgs 2750nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) - Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount Supplier Device Package Y3-Li Package / Case Y3-Li |
