VMO550-01F Datasheet
VMO550-01F Datasheet
Total Pages: 2
Size: 46.68 KB
IXYS
This datasheet covers 1 part numbers:
VMO550-01F
|
Manufacturer IXYS Series HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 590A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2.1mOhm @ 500mA, 10V Vgs(th) (Max) @ Id 6V @ 110mA Gate Charge (Qg) (Max) @ Vgs 2000nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 50000pF @ 25V FET Feature - Power Dissipation (Max) 2200W (Tc) Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount Supplier Device Package Y3-DCB Package / Case Y3-DCB |
