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V8PA10HM3/I Datasheet

V8PA10HM3/I Datasheet
Total Pages: 5
Size: 146.87 KB
Vishay Semiconductor Diodes Division
This datasheet covers 2 part numbers: V8PA10HM3/I, V8PA10-M3/I
V8PA10HM3/I Datasheet Page 1
V8PA10HM3/I Datasheet Page 2
V8PA10HM3/I Datasheet Page 3
V8PA10HM3/I Datasheet Page 4
V8PA10HM3/I Datasheet Page 5
V8PA10HM3/I

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

Automotive, AEC-Q101, eSMP®, TMBS®

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

100V

Current - Average Rectified (Io)

8A

Voltage - Forward (Vf) (Max) @ If

760mV @ 8A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

800µA @ 100V

Capacitance @ Vr, F

850pF @ 4V, 1MHz

Mounting Type

Surface Mount

Package / Case

DO-221BC, SMA Flat Leads Exposed Pad

Supplier Device Package

DO-221BC (SMPA)

Operating Temperature - Junction

-40°C ~ 150°C

V8PA10-M3/I

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

eSMP®, TMBS®

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

100V

Current - Average Rectified (Io)

8A

Voltage - Forward (Vf) (Max) @ If

760mV @ 8A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

800µA @ 100V

Capacitance @ Vr, F

850pF @ 4V, 1MHz

Mounting Type

Surface Mount

Package / Case

DO-221BC, SMA Flat Leads Exposed Pad

Supplier Device Package

DO-221BC (SMPA)

Operating Temperature - Junction

-40°C ~ 150°C