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US5U1TR Datasheet

US5U1TR Datasheet
Total Pages: 4
Size: 65.48 KB
Rohm Semiconductor
This datasheet covers 1 part numbers: US5U1TR
US5U1TR Datasheet Page 1
US5U1TR Datasheet Page 2
US5U1TR Datasheet Page 3
US5U1TR Datasheet Page 4
US5U1TR

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

1.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

240mOhm @ 1.5A, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

2.2nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

80pF @ 10V

FET Feature

Schottky Diode (Isolated)

Power Dissipation (Max)

1W (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TUMT5

Package / Case

6-SMD (5 Leads), Flat Lead