UPA2739T1A-E2-AY Datasheet
UPA2739T1A-E2-AY Datasheet
Total Pages: 7
Size: 143.08 KB
Renesas Electronics America
This datasheet covers 1 part numbers:
UPA2739T1A-E2-AY
Renesas Electronics America Manufacturer Renesas Electronics America Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 85A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 5.7mOhm @ 23A, 4.5V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 153nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 6050pF @ 10V FET Feature - Power Dissipation (Max) 1.5W (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-HVSON (5.4x5.15) Package / Case 8-PowerVDFN |