UPA2630T1R-E2-AX Datasheet
UPA2630T1R-E2-AX Datasheet
Total Pages: 7
Size: 241.52 KB
Renesas Electronics America
This datasheet covers 1 part numbers:
UPA2630T1R-E2-AX
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Manufacturer Renesas Electronics America Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 12V Current - Continuous Drain (Id) @ 25°C 7A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 59mOhm @ 3.5A, 1.8V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 11.3nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 1260pF @ 10V FET Feature - Power Dissipation (Max) 2.5W (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 6-HUSON (2x2) Package / Case 6-PowerWDFN |
