UPA1912TE(0)-T1-AT Datasheet
UPA1912TE(0)-T1-AT Datasheet
Total Pages: 10
Size: 189.7 KB
Renesas Electronics America
This datasheet covers 1 part numbers:
UPA1912TE(0)-T1-AT
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Manufacturer Renesas Electronics America Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 12V Current - Continuous Drain (Id) @ 25°C 4.5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 50mOhm @ 2.5A, 4.5V Vgs(th) (Max) @ Id 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 5.6nC @ 4V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 810pF @ 10V FET Feature - Power Dissipation (Max) 200mW (Ta) Operating Temperature 150°C Mounting Type Surface Mount Supplier Device Package SC-95 Package / Case SC-95 |
