UNR422200A Datasheet
![UNR422200A Datasheet Page 1](http://pneda.ltd/static/datasheets/images/31/unr422200a-0001.webp)
![UNR422200A Datasheet Page 2](http://pneda.ltd/static/datasheets/images/31/unr422200a-0002.webp)
![UNR422200A Datasheet Page 3](http://pneda.ltd/static/datasheets/images/31/unr422200a-0003.webp)
![UNR422200A Datasheet Page 4](http://pneda.ltd/static/datasheets/images/31/unr422200a-0004.webp)
![UNR422200A Datasheet Page 5](http://pneda.ltd/static/datasheets/images/31/unr422200a-0005.webp)
![UNR422200A Datasheet Page 6](http://pneda.ltd/static/datasheets/images/31/unr422200a-0006.webp)
Manufacturer Panasonic Electronic Components Series - Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 500mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 4.7 kOhms Resistor - Emitter Base (R2) 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 100mA, 10V Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 100mA Current - Collector Cutoff (Max) 1µA Frequency - Transition 200MHz Power - Max 300mW Mounting Type Through Hole Package / Case 3-SSIP Supplier Device Package NS-B1 |
Manufacturer Panasonic Electronic Components Series - Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 500mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 2.2 kOhms Resistor - Emitter Base (R2) 2.2 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 100mA, 10V Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 100mA Current - Collector Cutoff (Max) 1µA Frequency - Transition 200MHz Power - Max 300mW Mounting Type Through Hole Package / Case 3-SSIP Supplier Device Package NS-B1 |
Manufacturer Panasonic Electronic Components Series - Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 500mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 2.2 kOhms Resistor - Emitter Base (R2) 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 100mA, 10V Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 100mA Current - Collector Cutoff (Max) 1µA Frequency - Transition 200MHz Power - Max 300mW Mounting Type Through Hole Package / Case 3-SSIP Supplier Device Package NS-B1 |
Manufacturer Panasonic Electronic Components Series - Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 500mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 10 kOhms Resistor - Emitter Base (R2) 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 100mA, 10V Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 100mA Current - Collector Cutoff (Max) 1µA Frequency - Transition 200MHz Power - Max 300mW Mounting Type Through Hole Package / Case 3-SSIP Supplier Device Package NS-B1 |